Capacitance-vs-voltage characteristics of ZnO varistors

Mukae, Kazuo; Tsuda, Kouichi; Nagasawa, Ikuo

doi:10.1063/1.326411

Cited by 422 publications

(166 citation statements)

References 13 publications

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“…Such long-term aging simulation aims at portraying the migration process of mobile donor ions and their neutralization with interfacial acceptor states. Various kinds of defect ions are considered, and simulated aging characteristics are compared with experimental aging data of quasi-bicrystal 77,78 to identify the dominant mobile species.…”

Section: Identification Of Dominant Mobile Ionmentioning

confidence: 99%

Electrical degradation of double-Schottky barrier in ZnO varistors

Cheng

2016

AIP Advances

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Researches on electrical degradation of double-Schottky barrier in ZnO varistors are reviewed, aimed at the constitution of a full picture of universal degradation mechanism within the perspective of defect. Recent advances in study of ZnO materials by atomic-scale first-principles calculations are partly included and discussed, which brings to our attention distinct cognition on the native point defects and their profound impact on degradation.

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Section: Identification Of Dominant Mobile Ionmentioning

confidence: 99%

Electrical degradation of double-Schottky barrier in ZnO varistors

Cheng

2016

AIP Advances

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“…The results of VI curve measured by TLP are presented in Journal of the Ceramic Society of Japan 124 [6] 684-688 2016 JCS-Japan formed at grain boundaries, and linearity in high current responsible for ohmic resistance of ZnO grains. 1), 8) In the case of SrCoO 3 doped-ZnO, as stated in our previous paper, non-linearity arises from hetero-junctions comprising n-p (ZnO/SrCoO 3 ) and p-n (SrCoO 3 /ZnO) between ZnO grains. 5) The results over a wide range of currentvoltage using TLP suggest that the dominant path of current flow above 1 A is through ohmic ZnO grains without potential barriers, because of linear VI behavior depending on applied voltage.…”

Section: Tlp Analysis Of Effect Of Zno Grain Resistivity On Esd Stabimentioning

confidence: 70%

TLP analysis of variation in ESD performance by co-firing with copper electrodes in SrCoO<sub>3</sub> doped-ZnO based multilayer varistors

Higashi

Koga

2016

J. Ceram. Soc. Japan

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This would be the first report that transmission line pulse (TLP) analysis for stability against electrostatic discharge (ESD) of CuMLCVs reveals the effect of ZnO grain resistivity under ESD zapping. The influence has been evident from results over a wide range of VI characteristics provided by TLP measurement. ESD stability is found to be closely related to variations of ZnO grain resistivity, greatly depending on oxygen partial pressure (P O2 ) during sintering. The lowering of ZnO resistance leads to high stability against ESD. Thus, the stability is demonstrated to be drastically improved with decreasing ohmic resistance down to the lowest levels by sintering below P O2 of 1.6 © 10 ¹9 MPa. Then, influence of Cu diffusion on their properties of MLCVs was investigated in bulk-disks of SrCoO 3 doped-ZnO with various CuO additions. The enhancement of ZnO grain resistivity is caused by the slight diffusion of Cu + during the sintering in a relatively weak reducing P O2 above 2.2 © 10 ¹9 MPa, resulting in low ESD stability. However, ZnO grain resistivity is not influenced by Cu diffusion below 0.005 mol % as CuO, thus Cu-MLCVs containing below the affected level have been considered bringing high ESD performance. It was confirmed experimentally that sintering of Cu-MLCVs in the optimum reducing atmosphere provides high ESD stability and significant suppression (about 1100 to 150 V) for ESD zapping at 8 kV under IEC61000-4-2. Cu-MLCVs obtained are able to have high protection performance as well as ESD stability at the same level as a device in practical use. Lowering of ZnO resistivity by a decrease of Cu diffusion is believed to give benefits to overall performance of Cu-MLCVs.

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“…The CV measurement method is effective in yielding the values of ¤ and N D ; 12) however, it becomes ineffective when the emission and/or capture of carriers by the trap levels at the grain boundaries and in ZnO grains do/does not occur. Thus, trap levels were analyzed by using ICTS.…”

Section: Resultsmentioning

confidence: 99%

Electrical characteristics of SrCoO<sub>3</sub>-added zinc oxide varistors

Kurokawa

Sato

Yoshikado

2015

J. Ceram. Soc. Japan

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The electrical characteristics and interfacial trap levels at grain boundaries of SrCoO 3 (SCO, 0.253.0 mol %)-added ZnO varistors were investigated. A marked nonlinearity was observed in the VJ characteristics. The resistance to electrical degradation correlated with the orientation of the (100) plane of ZnO grains: the resistance was large when the (100) plane was parallel to the electrode. Isothermal capacitance transient spectroscopy revealed two kinds of interfacial trap levels. The deeper level was observed in all samples. The shallower level was observed only in samples with 2.5 mol % or more added SCO. Each trap level had a concentration that increased in proportion to the temperature. At room temperature, the concentrations of all trap levels in samples with 2.0 mol % or less SCO were much lower. As a result, no transient capacitance was observed under an applied bias voltage. This suggests that the main cause of the nonlinearity observed in VJ characteristics of samples with 2.0 mol % or less SCO was not the presence of interfacial trap levels, but rather the Co and/or ZnSrO 2 in the ZnO grains.

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Capacitance-vs-voltage characteristics of ZnO varistors

Abstract: Studies were made on the capacitance-vs-voltage characteristics of ZnO varistors which contain rare-earth metal oxides and cobalt oxide. On the basis of the symmetrical

Cited by 422 publications

References 13 publications

Electrical degradation of double-Schottky barrier in ZnO varistors

Electrical degradation of double-Schottky barrier in ZnO varistors

TLP analysis of variation in ESD performance by co-firing with copper electrodes in SrCoO<sub>3</sub> doped-ZnO based multilayer varistors

Electrical characteristics of SrCoO<sub>3</sub>-added zinc oxide varistors

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