Capacitance transient spectra of processing- and radiation-induced defects in silicon solar cells

Schott, J. T.; Deangelis, H. M.; Drevinsky, P. J.

doi:10.1007/bf02670858

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Beam Characteristics1

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1981

1999

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Cited by 9 publications

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“…( 9 ) In a clean PEBA processing system, the carbon concentration of the sample was not detectable. ( 5 ) Contamination from the anode was also undetectable, except when the anode began to melt at fluence levels above normal processing requirements.…”

Section: Beam Characteristicsmentioning

confidence: 99%

Demonstration of Pulsed Electron Beam Applications (PEBA) for Fabricating Small Geometry Semiconductor Devices

Greenwald¹

1981

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Section: Beam Characteristicsmentioning

confidence: 99%

Demonstration of Pulsed Electron Beam Applications (PEBA) for Fabricating Small Geometry Semiconductor Devices

Greenwald¹

1981

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Room-temperature irradiation of p-type Silicon

Londos

1985

phys. stat. sol. (a)

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Transient capacitance spectroscopy is used to study majority and minority traps introduced in pulled and float‐zone boron‐doped silicon, after 1.5 MeV electron irradiation at room temperature. In addition to familiar levels attributed to the positive charge state of the divacancy, the carbon interstitial, and the carbon‐related defects, some other traps previously reported in solar cells are detected. In pulled silicon the minority trap Ec – 0.26 eV is studied and the results favour its attribution to the (Bi–Oi) complex. Some differences exist between these results and those already reported by other authors for p‐type silicon. In particular, the peak normally attributed to the carbon interstitial displays different annealing behavour between the float‐zone and the pulled material.

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