1991
DOI: 10.1109/22.85393
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Capacitance of a circular symmetric model of a via hole including finite ground plane thickness

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Cited by 70 publications
(18 citation statements)
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“…Let the partial charge on the conducting plane from D b to L be Q.D 2Q I C Q II / where Figure 6 illustrates Q as a function of the upper limit L for different b=a when a D 200 m (typical via radius). Note that Q is approximately linearly proportional to L for large values of L, and the charge per unit length remains almost constant for these values of L. Figure 6 shows that Q (D Qj Db2 Qj Db1 , b 1 , and b 2 : aperture outer radii) increases with an increasing b (D b 2 b 1 ) and is independent of L. Table 1 compares the capacitance changes (C D Q=V 0 ) between the proposed theory and Kok and Zutter (1991). Good agreement is noted for small aperture openings but some disagreement with an increasing aperture size.…”
Section: Computationsmentioning
confidence: 87%
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“…Let the partial charge on the conducting plane from D b to L be Q.D 2Q I C Q II / where Figure 6 illustrates Q as a function of the upper limit L for different b=a when a D 200 m (typical via radius). Note that Q is approximately linearly proportional to L for large values of L, and the charge per unit length remains almost constant for these values of L. Figure 6 shows that Q (D Qj Db2 Qj Db1 , b 1 , and b 2 : aperture outer radii) increases with an increasing b (D b 2 b 1 ) and is independent of L. Table 1 compares the capacitance changes (C D Q=V 0 ) between the proposed theory and Kok and Zutter (1991). Good agreement is noted for small aperture openings but some disagreement with an increasing aperture size.…”
Section: Computationsmentioning
confidence: 87%
“…The Weber transform, the modematching method, and the superposition principle will be used to solve this problem, as was done in Lee and Eom (2010). Note that previous works (Wang et al, 1988;Kok & Zutter, 1991;Lee & Dudley, 1990) were based on the integral equation and the method of moments. Unlike the method of moments, the proposed approach uses eigenfunction expansions, which guarantee a simple convergent series solution.…”
Section: Introductionmentioning
confidence: 99%
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“…The terms C a and ε eff are defined as shown in (11) and (12). In (11) and (13), w, t, h and w e represent width, thickness of the conductor, substrate thickness, and effective width that accounts for the extra capacitance caused by the finite thickness of the signal conductor, respectively.…”
Section: Impedance Matching At Interconnect-via Junctionmentioning
confidence: 99%
“…The capacitance of the via is extracted either from the solution of integro-differential equations [12] or from full-wave simulations [18]. Multiple via interconnect structures have been analyzed by decomposing the geometry into exterior and interior structures [8].…”
Section: Introductionmentioning
confidence: 99%