Capacitance Modeling in Dual Field-Plate Power GaN HEMT for Accurate Switching Behavior

Ahsan, Sheikh Aamir; Ghosh, Sudip; Sharma, Khushboo; DasGupta, Anirvan; Khandelwal, Sourabh; Chauhan, Yogesh Singh

doi:10.1109/ted.2015.2504726

Cited by 77 publications

(16 citation statements)

References 26 publications

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“…Toshiki Kabemura et al made a 2-D analysis of breakdown characteristics of FP HEMTs with a high-k passivation layer, confirming that the V BD would increase with relative permittivity increasing [19]. For investigating the impact of FP-G and FP-S on the capacitances, Aamir et al modeled the bias dependence of terminal capacitances, and the proposed model is in excellent agreement with measured data [20]. Meanwhile, the incorporation of FP-S and FP-D was considered to be an effective way to improve V BD and reduce the on-resistance to about 0.6 mΩ•cm 2 [21].…”

Section: Introductionmentioning

confidence: 91%

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Simulation of AlGaN/GaN HEMTs’ Breakdown Voltage Enhancement Using Gate Field-Plate, Source Field-Plate and Drain Field Plate

et al. 2019

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A 2-D simulation of off-state breakdown voltage (VBD) for AlGaN/GaN high electron mobility transistors (HEMTs) with multi field-plates (FPs) is presented in this paper. The effect of geometrical variables of FP and insulator layer on electric field distribution and VBD are investigated systematically. The FPs can modulate the potential lines and distribution of an electric field, and the insulator layer would influence the modulation effect of FPs. In addition, we designed a structure of HEMT which simultaneously contains gate FP, source FP and drain FP. It is found that the VBD of AlGaN/GaN HEMTs can be improved greatly with the corporation of gate FP, source FP and drain FP. We achieved the highest VBD in the HEMT contained with three FPs by optimizing the structural parameters including length of FPs, thickness of FPs, and insulator layer. For HEMT with three FPs, FP-S alleviates the concentration of the electric field more effectively. When the length of the source FP is 24 μm and the insulator thickness between the FP-S and the AlGaN surface is 1950 nm, corresponding to the average electric field of about 3 MV/cm at the channel, VBD reaches 2200 V. More importantly, the 2D simulation model is based on a real HMET device and will provide guidance for the design of a practical device.

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Section: Introductionmentioning

confidence: 91%

“…For much higher V BD , there is no doubt that the FP-G should be combined with the FP-S [20]. Figure 8 shows the structure of the device contained with FP-G, FP-S and FP-D simultaneously.…”

Section: Devices Contained With Fp-g Fp-s and Fp-dmentioning

confidence: 99%

Simulation of AlGaN/GaN HEMTs’ Breakdown Voltage Enhancement Using Gate Field-Plate, Source Field-Plate and Drain Field Plate

et al. 2019

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“…For more information, see https://creativecommons.org/licenses/by/4.0/ industry-standard model for GaN HEMTs, which showcases as a promising tool for improving the accuracy and versatility of today's RF and power GaN-based circuit simulations. In addition to the core modeling of dc-IV and intrinsic capacitances, in the ASM-GaN compact model, flicker noise, thermal noise [12], [13], trapping [11], and a capacitance model in the presence of different combinations of gate and source field plates [14], [15] are also modeled. In this work, we shall develop an accurate, yet simple, surface-potential-based model for the gate-leakage current.…”

Section: Introductionmentioning

confidence: 99%

Consistent Surface-Potential-Based Modeling of Drain and Gate Currents in AlGaN/GaN HEMTs

Albahrani

Heuken

Schwantuschke

et al. 2020

IEEE Trans. Electron Devices

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In this article, the gate current in AlGaN/GaN high-electron mobility transistors is modeled in a surface potential-based compact model. The thermionic emission, the Poole-Frenkel emission, and the Fowler-Nordheim tunneling are the dominant mechanisms for the gate current in the forward-and reverse-bias regions. These conduction mechanisms are modeled within the framework of the ASM-GaN compact model, which is a physics-based industry-standard model for GaN HEMTs, hence yielding a consistent model for the drain and gate currents. The proposed model captures the gate voltage, drain voltage, temperature, and gate-length dependencies of the gate current. The results of dc gate-leakage measurements of two GaN HEMT, differing only in terms of gate length, over a wide range of temperature, showing these current-conduction mechanisms, are presented, and the proposed model is validated accordingly. The developed gate current model, implemented in Verilog-A, is in excellent agreement with the experimental data.

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“…The formation of the 2dimensional electron gas (2DEG) in these devices is the heart of the device operation and has been studied in great detail in the literature [4]- [6]. Many articles are present for HEMTs, but the dimension used for gate length is in micrometer range [7]- [9].…”

Section: Introductionmentioning

confidence: 99%

Modeling of Noise Power Spectral Density Analysis for GaN/AlGaN HEMT

Vimala¹,

Vidyashree²

2016

JAMP

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Nano Technology is the branch of technology that deals with dimensions and tolerances in terms of nanometers. In this paper, the electrical characteristics analysis is determined for the Nano-GaN HEMT and Micro-GaN HEMT and also power spectrum density is determined for GaN Nano-HEMT by reducing the gate length Lg in nm range. The GaN Nano HEMT is producing high current comparing to Micro GaN HEMT. Accuracy of the proposed analytical model results is verified with simulation results.

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Capacitance Modeling in Dual Field-Plate Power GaN HEMT for Accurate Switching Behavior

Cited by 77 publications

References 26 publications

Simulation of AlGaN/GaN HEMTs’ Breakdown Voltage Enhancement Using Gate Field-Plate, Source Field-Plate and Drain Field Plate

Simulation of AlGaN/GaN HEMTs’ Breakdown Voltage Enhancement Using Gate Field-Plate, Source Field-Plate and Drain Field Plate

Consistent Surface-Potential-Based Modeling of Drain and Gate Currents in AlGaN/GaN HEMTs

Modeling of Noise Power Spectral Density Analysis for GaN/AlGaN HEMT

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