Capacitance Evolution of Photovoltaic Solar Modules Under the Influence of Electrical Stress

Zaraket, Jean; Aillerie, Michel; Salame, Chafic

doi:10.1016/j.egypro.2015.07.795

Cited by 5 publications

(6 citation statements)

References 12 publications

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“…However, in the range of the average electrical field value used in the present study the increase of the external electrical field can cause a narrowing of the SCR like the interest is to reduce the SCR in p-n junction. The evolutions observed in Figure 6 show excellent agreement with the results presented by Liou et al [20] and Jean Zaraket et al [21]. It can be deducted here that the average of the external electrical field used for this simulation cannot cause the breakdown of the p-n junction of the solar cell under integration of the electrical field production source.…”

Section: Study Of the Capacitance Versus The External Electrical Fieldsupporting

confidence: 88%

Polycrystalline Silicon Solar Cell p-n Junction Capacitance Behavior Modelling under an Integrated External Electrical Field Source in Solar Cell System

Ouédraogo¹,

Ouedraogo²,

Kaboré³

et al. 2020

EPE

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The state of the p-n junction is very important to explain the performances of a solar cell. Some works give the influence of the electric field on the junction capacitance. However, these works do not relate the quality of the p-n junction under the electic field. The present manuscript is about a theoretical modelling of the p-n junction capacitance behavior of the polycrystalline silicon solar cell under an integration of the external electrical field source. An external electrical source is integrated in a solar cell system. The electronic carriers charge generated in the solar cell crossed mainly the junction with the great strength external electrical field. In open circuit, this crossing of the electronic charge carriers causes the thermal heating of the p-n junction by Joule effect. The p-n junction capacitance plotted versus the junction dynamic velocity and the photo-voltage for different external electrical fields. The electric field causes the decrease of the photo-voltage mainly the open-circuit photo-voltage. The decrease of the photo-voltage translates the narrowing of the Space Charge Region (SCR). The average value of the external electric field used in this study is not sufficient to cause the breakdown of the p-n junction of the solar cell system under integration of the external electrical field production source. The increase of the electrical field causes rather the narrowing of the SCR. That can provide an improvement of the solar cell's electrical outputs.

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Section: Study Of the Capacitance Versus The External Electrical Fieldsupporting

confidence: 88%

Polycrystalline Silicon Solar Cell p-n Junction Capacitance Behavior Modelling under an Integrated External Electrical Field Source in Solar Cell System

Ouédraogo¹,

Ouedraogo²,

Kaboré³

et al. 2020

EPE

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“…This phenomenon will induce a greater possibility of capturing the photo-excited electrons, thus decreasing the photovoltaic current and thus the module efficiency. We can compare these results by the parameters obtained in the last papers [4][5][6][7][8], This low value of shunt resistance and the high value of ideality factor (A>1) when the stress applied, means the increase of the leakage current and a degradation of performance of PV module.…”

Section: Resultsmentioning

confidence: 91%

“…This DLTS technique is a complementary performant method of indirect measurements of semiconductor junction defects, as for example, techniques used in the Ref. [4][5][6] and [7,8] based on I(V) and C(V) characterizations. Thus, the DLTS technique is one of the most performant techniques for characterizations of internal defects in semiconductor juntions [9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Analysis of defects of PV solar modules using deep level transient spectroscopy. Feasability and limits

Zaraket

Kokanyan

Aillerie

et al. 2020

Technologies and Materials for Renewable Energy, Environment and Sustainability: Tmrees20

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In a photovoltaic solar module, temperature and shading variations or non uniform illumination but also any recombination of interconnection failure, cell failure are at the origin of local hot spots, variations in the photocurrent or mismatches from cell to another cell, aging and local deterioration of the modules with damages that can be irreversible. To analyze the intrinsic origin and the behavior of the damage phenomena with electrical and thermal stresses, a Deep Level Transient Spectroscopy, DLTS, spectrometer based on a double box-car system is used to characterize the parameters of PV modules under external stressed parameters. Thus, based on DLTS spectroscopy measurements, this, work discusses and analyzes the nature of defects present in PV solar modules. We performed series of experimental measurements after various reverse currents injected for stress, at various temperature in monocrystalline silicon commercial modules. To avoid additional contribution of the photovurrent, electrical and thermal stresses were created in dark into the solar module structure and DLTS measurements were performed before and after in dark conditions for several common periods. Experimental results and analysis point the relation between the parameters of defect obtained by DLTS measurements and the electrical parameters of PV module i.e. the increase of the diffusion current, the low value of shunt resistance and the high value of the ideality factor (A>1). The optimum results that can be achieved with the DLTS technique in the characterization of PV modules were discussed based on previous results published on stressed PV modules obtained by more classical methods. As confirmed by DLTS, originally used for this kind of characterisation, the main results show the huge influence of the working external conditions of PV solar modules in real conditions. This contribution points also the limitation of the DLTS technique for the characterization of complex electronic systems as PV panels.

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“…Importantly, when the PV cell is operating near to maximum power voltage (V mp ), the diffusion capacitance becomes dominant and the capacitance of the depletion region becomes very small and can be ignored [41]. The diffusion capacitance depends exponentially on the solar cell voltage and linearly on the solar cell diode current [41][42][43]. Additionally, the influence of diffusion capacitance is essential because it relied on voltage and diode current.…”

Section: Pv Cell Diffusion Capacitancementioning

confidence: 99%

Reconfigurable Distributed Power Electronics Technique for Solar PV Systems

et al. 2021

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A reconfiguration technique using a switched-capacitor (SC)-based voltage equalizer differential power processing (DPP) concept is proposed in this paper for photovoltaic (PV) systems at a cell/subpanel/panel-level. The proposed active diffusion charge redistribution (ADCR) architecture increases the energy yield during mismatch and adds a voltage boosting capability to the PV system under no mismatch by connected the available PV cells/panels in series. The technique performs a reconfiguration by measuring the PV cell/panel voltages and their irradiances. The power balancing is achieved by charge redistribution through SC under mismatch conditions, e.g., partial shading. Moreover, PV cells/panels remain in series under no mismatch. Overall, this paper analyzes, simulates, and evaluates the effectiveness of the proposed DPP architecture through a simulation-based model prepared in PSIM. Additionally, the effectiveness is also demonstrated by comparing it with existing conventional DPP and traditional bypass diode architecture.

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Capacitance Evolution of Photovoltaic Solar Modules Under the Influence of Electrical Stress

Cited by 5 publications

References 12 publications

Polycrystalline Silicon Solar Cell p-n Junction Capacitance Behavior Modelling under an Integrated External Electrical Field Source in Solar Cell System

Polycrystalline Silicon Solar Cell p-n Junction Capacitance Behavior Modelling under an Integrated External Electrical Field Source in Solar Cell System

Analysis of defects of PV solar modules using deep level transient spectroscopy. Feasability and limits

Reconfigurable Distributed Power Electronics Technique for Solar PV Systems

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