Capacitance and conductance characterization of ferrocene-containing self-assembled monolayers on silicon surfaces for memory applications

Li, Qiliang; Mathur, Guru; Homsi, Mais; Surthi, Shyam; Misra, Veena; Malinovskii, Vladimir L.; Schweikart, Karl-Heinz; Yu, Lianghong; Lindsey, Jonathan S.; Liu, Zhiming; Dabke, Rajeev B.; Yasseri, Amir A.; Bocian, David F.; Kuhr, Werner G.

doi:10.1063/1.1500781

Cited by 105 publications

(105 citation statements)

References 10 publications

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“…277 As discussed in Section 3, provided that care is taken, silicon-carbon linked organic monolayers offer a convenient approach to chemically and electrically well-passivated silicon surfaces. The organic-semiconductor structure promises to expand the performances and applications of conventional semiconductor devices, with novel biosensing interfaces 259 and high-density memory storage 40,44,215 among the envisioned devices. For example, surface-bound molecules either charged or polarized can influence the energy levels near the surface (i.e.…”

Section: Summary and Perspectivesmentioning

confidence: 99%

Wet chemical routes to the assembly of organic monolayers on silicon surfaces via the formation of Si–C bonds: surface preparation, passivation and functionalization

2010

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Section: Summary and Perspectivesmentioning

confidence: 99%

Wet chemical routes to the assembly of organic monolayers on silicon surfaces via the formation of Si–C bonds: surface preparation, passivation and functionalization

2010

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“…By designing and positioning the proper molecules in the device the desired functionality is obtained. SAMs have been used as molecular memories [21], molecular wires [22], and have exhibited negative differential resistance [23].…”

Section: A Self-assembled Monolayers (Sams) On Solid Substratesmentioning

confidence: 99%

Using self-assembly for the fabrication of nano-scale electronic and photonic devices

Parviz

Ryan

Whitesides

2003

IEEE Trans. Adv. Packag.

177

118

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Abstract-Challenges facing the scaling of microelectronics to sub-50 nm dimensions and the demanding material and structural requirements of integrated photonic and microelectromechanical systems suggest that alternative fabrication technologies are needed to produce nano-scale devices. Inspired by complex, functional, self-assembled structures and systems found in Nature we suggest that self-assembly can be employed as an effective tool for nanofabrication. We define a self-assembling system as one in which the elements of the system interact in pre-defined ways to spontaneously generate a higher order structure. Self-assembly is a parallel fabrication process that, at the molecular level, can generate three-dimensional structures with sub-nanometer precision. Guiding the process of self-assembly by external forces and geometrical constrains can reconfigure a system dynamically on demand. We survey some of the recent applications of self-assembly for nanofabrication of electronic and photonic devices. Five self-assembling systems are discussed: 1) self-assembled molecular monolayers; 2) self-assembly in supramolecular chemistry; 3) self-assembly of nanocrystals and nanowires; 4) self-assembly of phase-separated block copolymers; 5) colloidal self-assembly. These techniques can generate features ranging in size from a few angstroms to a few microns. We conclude with a discussion of the limitations and challenges facing self-assembly and some potential directions along which the development of self-assembly as a nanofabrication technology may proceed.

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“…By attaching reduction-oxidation (redox) molecules as a floating gate in the complementary metal-oxide-semiconductor (CMOS) structure, one also creates a high-impedance nonamperometric electrode for probing the molecular redox states, in contrast to the low-impedance connections used in cyclic voltammetry (CyV) [6]- [9]. Previous studies have shown capacitance and conductance peaks associated with the charging and the discharging of the carriers stored at the MOs [7] and CyV hysteresis owing to the redox of molecules attached to the SiO 2 surface [6], [8], [9].…”

mentioning

confidence: 99%

Integration of Self-Assembled Redox Molecules in Flash Memory Devices

Shaw

Zhong

Hughes

et al. 2011

IEEE Trans. Electron Devices

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Abstract-Self-assembled monolayers (SAMs) of either ferrocenecarboxylic acid or 5-(4-Carboxyphenyl)-10,15,20-triphenylporphyrin-Co(II) (CoP) with a high-κ dielectric were integrated into the Flash memory gate stack. The molecular reductionoxidation (redox) states are used as charge storage nodes to reduce charging energy and memory window variations. Through the program/erase operations over tunneling barriers, the device structure also provides a unique capability to measure the redox energy without strong orbital hybridization of metal electrodes in direct contact. Asymmetric charge injection behavior was observed, which can be attributed to the Fermi-level pinning between the molecules and the high-κ dielectric. With increasing redox molecule density in the SAM, the memory window exhibits a saturation trend. Three programmable molecular orbital states, i.e., CoP 0 , CoP 1− , and CoP 2− , can be experimentally observed through a charge-based nonvolatile memory structure at room temperature. The electrostatics is determined by the alignment between the highest occupied or the lowest unoccupied molecular orbital (HOMO or LUMO, respectively) energy levels and the charge neutrality level of the surrounding dielectric. Engineering the HOMO-LUMO gap with different redox molecules can potentially realize a multibit memory cell with less variation. Index Terms-Coulomb blockade effect, high-κ dielectric, nonvolatile memory devices, reduction-oxidation (redox)-active molecules, self-assembled monolayer (SAM).

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Capacitance and conductance characterization of ferrocene-containing self-assembled monolayers on silicon surfaces for memory applications

Cited by 105 publications

References 10 publications

Wet chemical routes to the assembly of organic monolayers on silicon surfaces via the formation of Si–C bonds: surface preparation, passivation and functionalization

Wet chemical routes to the assembly of organic monolayers on silicon surfaces via the formation of Si–C bonds: surface preparation, passivation and functionalization

Using self-assembly for the fabrication of nano-scale electronic and photonic devices

Integration of Self-Assembled Redox Molecules in Flash Memory Devices

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