Cap layer effect in DC and RF characteristics of InP based n-p-n metamorphic δ-doped heterojunction bipolar transistor

Jena, M. R.; Diwarkar, A.; Панда, А. К.; Dash, G. N.

doi:10.1080/21681724.2021.1941280

International Journal of Electronics Letters

2021

DOI: 10.1080/21681724.2021.1941280

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Cap layer effect in DC and RF characteristics of InP based n-p-n metamorphic δ-doped heterojunction bipolar transistor

M. R. Jena

A. Diwarkar

А. К. Панда

et al.

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Cap layer effect in DC and RF characteristics of InP based n-p-n metamorphic δ-doped heterojunction bipolar transistor

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References 9 publications

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