Cantilever NEMS relay-based SRAM devices for enhanced reliability

Bota, S.; Verd, J.; Barceló, Joan; Gili, Xavier; Alorda, B.; Torrens, Gabriel; Benito, Carol de; Segura, J.

doi:10.1109/dtis.2017.7930177

Cited by 1 publication

(1 citation statement)

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“…To decrease the pull-in voltage, NEMS process [23,24,28,29] or liquid dielectric [30,31] is necessary. As logic devices, the NEMS are perfect [32][33][34], but the NEMS devices are hard to be used as power devices to convert tens or even hundreds of milliamperes current [35][36][37]. Devices with liquid dielectric also have followed disadvantages: (a) they are realized by a complex process, (b) the liquid environment introduces large damping coefficient, which deteriorates the switching time of the relays.…”

Section: Introductionmentioning

confidence: 99%

Low voltage, high speed and small area in-plane MEMS switch

Bian

Zhao

You

2019

J. Micromech. Microeng.

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Electrostatic in-plane microelectromechanical systems (MEMS) relays/switches are widely applied for their low power consumption and simple process. However, compared to the out-ofplane designs, in-plane designs usually suffer from high pull-in voltage, since the feature size of the bulk-silicon process limits the gap between the driving electrodes. Area cost and speed usually have to be sacrificed to enhance the driving force and decrease the pull-in voltage.Balancing the pull-in voltage, speed and area cost is difficult for MEMS relays/switches but is essential in many practical applications. Comb structure is promising to relieve this contradiction. In this paper, we integrated the comb structure with the cantilever structure. As a result, the pull-in voltage decreased with the decreasing of the mass and area cost. A novel electrostatic lateral MEMS switch was introduced. The experiments have shown that 12 V pull-in voltage, 120 µs switching time with a 28 V driving voltage at atmospheric pressure, and small area were fabricated using a conventional bulk-silicon process.

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