Can a silicene transistor be realized?

Zandvliet, Henricus J.W.

doi:10.1016/j.nantod.2014.09.007

Cited by 26 publications

(16 citation statements)

References 45 publications

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“…nanoribbons), coupling to a substrate and external electric field. 171 Above-mentioned experimental work on back-gate silicene transistors demonstrated that coupling to a substrate and applying an external vertical electric field could effectively tune or engineer the band structure. It also provides transferable knowledge to explore the other two approaches.…”

Section: Silicene-based Technology Applications 41 Silicene Transistorsmentioning

confidence: 99%

Silicene, silicene derivatives, and their device applications

et al. 2018

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Silicene, the ultimate scaling of a silicon atomic sheet in a buckled honeycomb lattice, represents a monoelemental class of two-dimensional (2D) materials similar to graphene but with unique potential for a host of exotic electronic properties. Nonetheless, there is a lack of experimental studies largely due to the interplay between material degradation and process portability issues. This review highlights the state-of-the-art experimental progress and future opportunities in the synthesis, characterization, stabilization, processing and experimental device examples of monolayer silicene and its derivatives. The electrostatic characteristics of the Ag-removal silicene field-effect transistor exhibit ambipolar charge transport, corroborating with theoretical predictions on Dirac fermions and Dirac cone in the band structure. The electronic structure of silicene is expected to be sensitive to substrate interaction, surface chemistry, and spin-orbit coupling, holding great promise for a variety of novel applications, such as topological bits, quantum sensing, and energy devices. Moreover, the unique allotropic affinity of silicene with single-crystalline bulk silicon suggests a more direct path for the integration with or revolution to ubiquitous semiconductor technology. Both the materials and process aspects of silicene research also provide transferable knowledge to other Xenes like stanene, germanene, phosphorene, and so forth.

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Section: Silicene-based Technology Applications 41 Silicene Transistorsmentioning

confidence: 99%

Silicene, silicene derivatives, and their device applications

et al. 2018

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“…Silicene is predicted to possess strong spin-orbit coupling, which should result in detectable quantum spin Hall effect [5] . Moreover, silicene is essentially compatible with current Si-based technologies [9] , giving rise to great promise in the electronic application of silicene [10][11][12] . Silicene field-effect transistors (FETs) exhibiting an ambipolar behavior with carrier mobilities around 100 cm 2 /Vs at room temperature have already been demonstrated [11] .…”

Section: Introductionmentioning

confidence: 99%

“…For the practical use of silicene, the opening and controlling of the bandgap of silicene are critical [12] . The reactive surface of silicene enables chemical modification to tune the band structure of silicene [13] by means of inorganic surface modification , organic surface modification [39][40][41][42][43][44][45] , oxidation [46][47][48][49][50][51][52][53] , doping [54][55][56][57][58][59][60] and formation of 2D hybrids [61][62][63][64][65] .…”

Section: Introductionmentioning

confidence: 99%

Chemical modification of silicene

Wang¹,

Xu²,

Pi³

2015

Chinese Phys. B

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Silicene is a two-dimensional material, which is composed of a single layer of silicon atoms with sp 2 -sp 3 mixed hybridization. The sp 2 -sp 3 mixed hybridization renders silicene excellent reactive ability, facilitating the chemical modification of silicene. It has been demonstrated that chemical modification effectively enables the tuning of the properties of silicene. We now review all kind of chemical modification methods for silicene including hydrogenation, halogenation, organic surface modification, oxidation, doping and formation of two-dimensional hybrids. The effects of these chemical modification methods on the geometrical, electronic, optical and magnetic properties of silicene are discussed. The potential applications of chemically modified silicene in a variety of fields such as electronics, optoelectronics and magnetoelectronics are introduced. We finally envision future work on the chemical modification of silicene for the sake of further advancing the development of silicene.

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“…Its important structural difference from graphene consists in a much more pronounced buckling of its 2D hexagonal lattice, thus leading to a non-equivalence of two sublattices in the same layer and to opening of a bandgap under normal-to-plane electric bias [4][5][6]9]. Subsequently, fabrication of practical field-effect transistors based on a silicene sheet is extensively sought for [7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Biased doped silicene as a way to tune electronic conduction

Pogorelov¹,

Локтев²

2016

Phys. Rev. B

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Restructuring of electronic spectrum in a buckled silicene monolayer under some applied voltage between its two sublattices and in presence of certain impurity atoms is considered. A special attention is given to formation of localized impurity levels within the band gap and the to their collectivization at finite impurity concentration. It is shown that a qualitative restructuring of quasiparticle spectrum within the initial band gap and then specific metal-insulator phase transitions are possible for such disordered system and can be effectively controlled by variation of the electric field bias at given impurity perturbation potential and concentration. Since these effects are expected at low impurity concentrations but at not too low temperatures, they can be promising for practical applications in nanoelectronics devices.

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Can a silicene transistor be realized?

Cited by 26 publications

References 45 publications

Silicene, silicene derivatives, and their device applications

Silicene, silicene derivatives, and their device applications

Chemical modification of silicene

Biased doped silicene as a way to tune electronic conduction

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