The instability of thin ferroelectric films is discussed based on the close similarity of dielectric properties between bulk Bi-layered perovskites and thin BaTiO 3 films. The dielectric properties of pseudo-two-dimensional layered perovskites suggest that the bulk layered ferroelectric is a good model of ultra-thin ferroelectric film with a few perovskite units, free from any misfit lattice strain. It seems plausible that the ferroelectric interaction is still prominent but shows a crossover from ferroelectric to antiferroelectric along the unique c-axis (perpendicular to the film plane); with decreasing thickness, the ferroelectricity appears within the plane, which results in so-called "canted ferroelectricity". An extra relaxation mode induced by surface effect of thin films correlates with soft mode, which results in a new intermediate phase between the paraelectric and ferroelectric phases. These evidences may indicate no critical thickness even for ferroelectric ultrathin films.
KeywordsFerroelectricity, Layered Oxide, Perovskite, Thin Film, Size Effect * Corresponding author. M. Fukunaga et al. 225long-range force in dielectric media, it is important to know the exact size effect of thin films on ferroelectricity and the critical thickness where the ferroelectricity may disappear. However, various experiments of ferroelectric thin films have not been enough investigated because of its difficulty to grow a good quality of ultra-thin films and to estimate the effects of misfit strain due to their substrate. It is of fundamental interest in twodimensional structure of ferroelectric thin films experimentally and theoretically since early times [6]. There have been many attempts to study the size effect on ferroelectricity, leading to a rich literature of both experimental and theoretical works [7] [8]. Especially, studies of ferroelectric perovskites are activated and are promised as one of the best sources of ferroelectric thin films since the perovskite oxides show prominent high dielectric constants and piezoelectric properties.The similarity of dielectric and structural features has been observed between BaTiO 3 thin films and Bilayered perovskite compounds. This means that both materials have a common mechanism for ferroelectric activity. Among Bi-layered perovskites, SrBi 2 Ta 2 O 9 (abbreviated as SBT) has been extensively studied as a candidate for ferroelectric non-volatile memory devices. Based on dielectric and structural similarities, it may be reasonable to consider that SBT is a good model for an ideal ferroelectric thin film, free from any misfit lattice strain. The close analogy between Bi-layered perovskites and ferroelectric thin films was pointed out simply in a previous paper [9]. In this review, we will discuss the ferroelectric stability in ultra-thin films in detail from the viewpoint of the nature of Bi-layered perovskites.
BaTiO 3 : Bulk Crystal and Thin FilmWe will simply introduce fundamentals of barium titanate, BaTiO 3 , in the form of bulk crystal and thin films. Perovskite oxide...