Calorimetric and galvanic cell studies of the thermodynamic properties of palladium-tin alloys

Bryant, A.W.; Bugden, W.G.; Pratt, J.N.

doi:10.1016/0001-6160(70)90073-8

Cited by 36 publications

(15 citation statements)

References 13 publications

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“…[3] A thermodynamic assessment of the system has been reported by Ngai and Chang. pct Sn, to be 1050 K. Bryant et al [16] also carried out emf measurements and determined the activities of Pd in the (Pd), Pd 2 Sn, ␣-Pd 3 Sn 2 , ␤-Pd 3 Sn 2 , and PdSn phases at 1050 K. They also reported the heat of formation of all solid phases at 320 and 298 K. Guadagno and Pool [17] measured the heat of formation of PdSn, PdSn 2 , and PdSn 4 at 273 K. They also measured the enthalpy of solution of Pd in liquid Sn at an infinite dilution ( Pd ) in the temperature H range from 638 to 797 K. Darby et al [18] determined the enthalpy of formation of fcc solid-solution (Pd), at 298 K and in the composition range from 5 to 15 at. pct Sn, to be 1050 K. Bryant et al [16] also carried out emf measurements and determined the activities of Pd in the (Pd), Pd 2 Sn, ␣-Pd 3 Sn 2 , ␤-Pd 3 Sn 2 , and PdSn phases at 1050 K. They also reported the heat of formation of all solid phases at 320 and 298 K. Guadagno and Pool [17] measured the heat of formation of PdSn, PdSn 2 , and PdSn 4 at 273 K. They also measured the enthalpy of solution of Pd in liquid Sn at an infinite dilution ( Pd ) in the temperature H range from 638 to 797 K. Darby et al [18] determined the enthalpy of formation of fcc solid-solution (Pd), at 298 K and in the composition range from 5 to 15 at.…”

Section: B Pb-sn Systemmentioning

confidence: 99%

“…For the optimization of model parameters of the Pd-Sn system, the activity data for the liquid phase, [15] the activity data of the fcc (Pd) phase, [19] the heat of formation of the fcc (Pd) phase, [16,18] the heat of formation of the intermediate phases, [16,17] and the phase diagram data [15,21,22] were used. The chemical potentials of Sn in fcc Pd reported by Pratt and Budgen [20] and Bryant et al [16] were not considered, as they differ significantly from the more recent measurements by Schaller and Brodowsky.…”

Section: Optimization Of Literature Datamentioning

confidence: 99%

“…This is somewhat consistent with the asymmetric heat of formation of solid phases predicted by de Boer et al [39] In the absence of experimental data, the optimized heats of formation (⌬ ) of the Figure 4 shows the calculated Pb-Sn phase diagram using the thermodynamic parameters of Ngai and Chang. [16,19,20] The reference states are fcc-Pd and liquid-Sn. The calculated liquid/Pd-phase field is much narrower than that reported.…”

Section: Figures 1(a) and (B)mentioning

confidence: 99%

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Thermodynamic modeling of the palladium-lead-tin system

Ghosh

1999

Metall Mater Trans A

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A set of self-consistent, thermodynamic model parameters is presented to describe the phase equilibria of Palladium-Lead (Pd-Pb) and Palladium-Tin (Pd-Sn) systems. A sublattice model is used for thermodynamic modeling of the intermediate phases. The experimental data agree very well with the values calculated using the optimized model parameters. Several isothermal and vertical sections of the ternary system, relevant to microelectronic soldering applications, are calculated. Several experiments are proposed, the data from which will be extremely helpful in refining the thermodynamic model parameters.

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Section: B Pb-sn Systemmentioning

confidence: 99%

Section: Optimization Of Literature Datamentioning

confidence: 99%

Section: Figures 1(a) and (B)mentioning

confidence: 99%

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Thermodynamic modeling of the palladium-lead-tin system

Ghosh

1999

Metall Mater Trans A

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“…19 These values indicate that the initial metal-oxide bonds are stronger than the possible metal-metal bonds, though the Pd-Sn bond may become stronger at higher Pd coverages. The ionic Sn0 2 is very stable, with a heat of formation of 138.8 kcallmol.…”

Section: Abruptness Of the Interfacesmentioning

confidence: 99%

“…19 Binding energy changes involving oxidation and/or relaxation are observed at lower coverages ofPd, however. The amount of Sn o is greater for the surfaces with less surface oxygen, which suggests that the interfacial reactions that reduce the Sn are favored by the presence of oxygen vacancies.…”

Section: B Palladium Depositionmentioning

confidence: 99%

Metal/semiconductor interfaces on SnO2(110)

Erickson

Fryberger

Semancik

1988

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Articles you may be interested inEffect of the number of interfaces on the magnetic properties of [SnO2/Cu-Zn ferrite] multilayer Reaction at a refractory metal/semiconductor interface: V/GaAs(110) J. Vac. Sci. Technol. A 3, 918 (1985); 10.1116/1.573349 Initial stage of formation of a metalsemiconductor interface: Al on GaAs (110) Interfaces formed by tin and palladium deposition on the (ItO) face of tin dioxide, Sn0 2 (a semiconductor due to native defects), have been studied from coverages of 0.05 monolayer (ML) to over to ML. The structural, chemical, electronic, and electrical properties of the surfaces were characterized primarily by low-energy electron diffraction (LEED), x-ray photoelectron spectroscopy, ultraviolet photoemission spectroscopy, and a retractable four-point conductivity probe. Modifications of the substrate by oxidation, annealing, and ion bombardment treatments produced three different substrate structures which were used to examine the interface abruptness and the metallization due to Sn and Pd. The deposition of Sn produced an increased surface conductivity on the ordered substrates due to the formation of donor states (oxygen vacancies) at the surface. The deposition of Pd results in the growth of a metallic layer beginning at 1-5 ML, depending upon the surface oxygen concentration. The metallic conductivity rapidly increases with Pd coverage and by 10 ML, LEED reveals microcrystallites in azimuthal registry with the substrate. In contrast, the development of metallic conductivity is relatively slow for the disordered Sn multilayers.

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Thermodynamic Properties of Palladium‐Indium Alloys

Schaller

Brodowsky

1978

Ber Bunsenges Phys Chem

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The thermodynamic properties of Pd – In alloys with 2 to 70 at.% In have been determined in the temperature range 800 to 1000°C from e.m.f. measurements on galvanic cells with an oxygen‐conducting solid electrolyte. Heats of mixing calculated from the activities are in excellent agreement with calorimetric data. The relative partial excess free energy of indium assumes unusually large negative values, up to −175 kJ/mol for palladium‐rich alloys. Two effects are discussed to account for the non‐ideal properties: The rise of the Fermi energy as the valence electrons of indium enter the 4d and 5sp bands of the alloy and the lattice distortion brought about by the different molar volumes of the components. The rise of the Fermi energy, as determined from the activity data, indicates a strict adherence of the alloys to the rigid band model.

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Calorimetric and galvanic cell studies of the thermodynamic properties of palladium-tin alloys

Cited by 36 publications

References 13 publications

Thermodynamic modeling of the palladium-lead-tin system

Thermodynamic modeling of the palladium-lead-tin system

Metal/semiconductor interfaces on SnO2(110)

Thermodynamic Properties of Palladium‐Indium Alloys

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