Calibration of a VUV spectrometer–detector system using synchrotron radiation

McPherson, A.; Rouze, Ned C.; Westerveld, W. B.; Risley, John S.

doi:10.1364/ao.25.000298

Cited by 40 publications

(12 citation statements)

References 37 publications

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“…1 15 Looking at Fig. 21, the expected energy distributions of protons from the process e + H 2 -e + e + HT*-e + e + H+ + H*(ni) (3)(4)(5)(6)(7)(8) can be inferred as shown on the left-hand side of Fig. 21.…”

Section: Protons From Dissociative Ionization Of Hzmentioning

confidence: 97%

Cross Sections and Related Data for Electron Collisions with Hydrogen Molecules and Molecular Ions

Tawara¹,

Itikawa²,

Nishimura³

et al. 1990

Journal of Physical and Chemical Reference Data

349

202

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Section: Protons From Dissociative Ionization Of Hzmentioning

confidence: 97%

Cross Sections and Related Data for Electron Collisions with Hydrogen Molecules and Molecular Ions

Tawara¹,

Itikawa²,

Nishimura³

et al. 1990

Journal of Physical and Chemical Reference Data

349

202

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show abstract

“…To provide relative calibrations of various VUV spectrometer the calibrated light sources with known spectra should be used, e.g. a windowless, rf-excited discharge lamp, a microwave-excited mercury lamp 95 or synchrotron radiation 183 . H2 discharge spectra can be also used for calibration 184 .…”

Section: Iii2 Vuv/uv Radiation In Low-k Plasma Processingmentioning

confidence: 99%

Impact of VUV photons on SiO2 and organosilicate low-k dielectrics: General behavior, practical applications, and atomic models

Baklanov

Jousseaume

Рахимова

et al. 2019

Applied Physics Reviews

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This paper presents an in-depth overview of the application and impact of UV/VUV light in advanced interconnect technology. UV light application in BEOL historically was mainly motivated by the need to remove organic porogen and generate porosity in organosilicate (OSG) low-k films. Porosity lowered the film's dielectric constant, k, which enables one to reduce the interconnect wiring capacitance contribution to the RC signal delay in integrated circuits. The UV-based low-k film curing (λ > 200 nm) proved superior to thermal annealing and electron beam curing. UV and VUV light also play a significant role in plasma-induced damage to pSiCOH. VUV light with λ < 190–200 nm is able to break Si-CH3 bonds and to make low-k materials hydrophilic. The following moisture adsorption degrades the low-k properties and reliability. This fact motivated research into the mechanisms of UV/VUV photon interactions in pSiCOH films and in other materials used in BEOL nanofabrication. Today, the mechanisms of UV/VUV photon interactions with pSiCOH and other films used in interconnect fabrication are fairly well understood after nearly two decades of research. This understanding has allowed engineers to both control the damaging effects of photons and utilize the UV light for material engineering and nanofabrication processes. Some UV-based technological solutions, such as low-k curing and UV-induced stress engineering, have already been widely adopted for high volume manufacturing. Nevertheless, the challenges in nanoscaling technology may promote more widespread adoption of photon-assisted processing. We hope that fundamental insights and prospected applications described in this article will help the reader to find the optimal way in this wide and rapidly developing technology area.

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“…Such devices provide accurate measurements of relative intensity but their calibration for absolute irradiance is very challenging [12]. In fact, the calibration procedure is sensitive to the geometry and the wavelength of the light source [12]. This complicates calibration with reference VUV light sources, because their effective emission volumes (≈ 1 mm 3 ) differ significantly from typical line of sight volume of plasma sources (>1 cm 3 ).…”

Section: Plasma Vuv-irradiance Measurementmentioning

confidence: 99%

VUV irradiance measurement of a 2.45 GHz microwave-driven hydrogen discharge

Komppula

Tarvainen

Kalvas

et al. 2015

J. Phys. D: Appl. Phys.

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Absolute values of VUV-emission of a 2.45 GHz microwave-driven hydrogen discharge are reported. The measurements were performed with a robust and straightforward method based on a photodiode and optical filters. It was found that the volumetric photon emission rate in the VUV-range (80-250 nm) is 10 16 -10 17 1/cm 3 s, which corresponds to approximately 8% dissipation of injected microwave power by VUV photon emission. The volumetric emission of characteristic emission bands was utilized to diagnostics of molecular plasma processes including volumetric rates of ionization, dissociation and excitation to high vibrational levels and metastable states. The estimated reaction rates imply that each injected molecule experiences several inelastic electron impact collisions. The upper limit for the total density of metastable neutrals (2S atoms and c 3 Π u molecules) was estimated to be approximately 0.5% of the neutral gas density.

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Calibration of a VUV spectrometer–detector system using synchrotron radiation

Cited by 40 publications

References 37 publications

Cross Sections and Related Data for Electron Collisions with Hydrogen Molecules and Molecular Ions

Cross Sections and Related Data for Electron Collisions with Hydrogen Molecules and Molecular Ions

Impact of VUV photons on SiO2 and organosilicate low-k dielectrics: General behavior, practical applications, and atomic models

VUV irradiance measurement of a 2.45 GHz microwave-driven hydrogen discharge

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