Calibration of a dual probe NanoCaliper AFM for CD metrology

McClure, Paul; Mancevski, Vladimir

doi:10.1117/12.599063

Cited by 5 publications

(3 citation statements)

References 1 publication

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“…Moreover, new algorithms should be developed for efficient and faster image reconstruction. On the other hand, numerous algorithms for the calibration of the AFM calipers have been proposed [83,[135][136][137].…”

Section: Dual-probe Atomic Force Microscope Calipermentioning

confidence: 99%

Advances in the atomic force microscopy for critical dimension metrology

Hussain

Ahmad

Song

2016

Meas. Sci. Technol.

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Downscaling, miniaturization and 3D staking of the micro/nano devices are burgeoning phenomena in the semiconductor industry which have posed sophisticated challenges in the critical dimension (CD) metrology. Over the past few years, atomic force microscopy (AFM) has emerged as an important CD metrology technique in meeting these challenges because of its high accuracy, 3D imaging capability, high spatial resolution and non-destructive nature. In this article, advances in the AFM based critical dimension (CD) metrology are systematically reviewed and discussed. CD metrology AFM techniques, strengths, limitations and scanning algorithms are described. Developments towards accurate measurements such as creep and hysteresis compensation of the piezoelectric scanners, their calibration and tip characterization are discussed. In addition, image reconstruction and measures for achieving high accuracy CD measurements with hybrid metrology technique are also discussed. CD metrology challenges offered by the next generation lithography (NGL) techniques such as those associated with the 3D nanodevices of 10 nm node and beyond have been highlighted.

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Section: Dual-probe Atomic Force Microscope Calipermentioning

confidence: 99%

Advances in the atomic force microscopy for critical dimension metrology

Hussain

Ahmad

Song

2016

Meas. Sci. Technol.

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“…These constants are relatively close and fall within a small range. Furthermore, the LennardJones model and the deflection of an AFM probe with a silicon tip have been applied to analyze a NanoCaliperprobe for its performance (McClure and Mancevski, 2005).…”

Section: An Overview Of the State Of Computational Modeling In An Atomentioning

confidence: 99%

Computational Models of a Nano Probe Tip for Static Behaviors

Feng¹,

Vorburger

Joung

et al. 2008

Scanning

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It is difficult to predict the measurement bias arising from the compliance of the atomic force microscope (AFM) probe. The issue becomes particularly important in this situation where nanometer uncertainties are sought for measurements with dimensional probes composed of flexible carbon nanotubes mounted on AFM cantilevers. We have developed a finite element model for simulating the mechanical behavior of AFM cantilevers with carbon nanotubes attached. Spring constants of both the nanotube and cantilever in two directions are calculated using the finite element method with known Young's moduli of both silicon and multiwall nanotube as input data. Compliance of the nanotube-attached AFM probe tip may be calculated from the set of spring constants. This paper presents static models that together provide a basis to estimate uncertainties in linewidth measurement using nanotubes. In particular, the interaction between a multiwall nanotube tip and a silicon sample is modeled using the Lennard-Jones theory. Snap-in and snap-out of the probe tip in a scanning mode are calculated by integrating the compliance of the probe and the sample-tip interacting force model. Cantilever and probe tip deflections and points of contact are derived for both horizontal scanning of a plateau and vertically scanning of a wall. The finite element method and the Lennard-Jones model provide a means to analyze the interaction of the probe and sample and measurement uncertainty, including actual deflection and the gap between the probe tip and the measured sample surface.

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“…So far, various strategies have been applied to correct the influence of the probe diameter [10] and curvature [11,12] as well as the deformation of the probe tip caused by interaction forces, either attractive forces in the case of the tapping mode X3D [13] or repulsive forces in the case of the step-in mode AFM [9].…”

Section: Introductionmentioning

confidence: 99%

Current limitations of SEM and AFM metrology for the characterization of 3D nanostructures

Häßler-Grohne

Hüser

Johnsen

et al. 2011

Meas. Sci. Technol.

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This contribution discusses the developed approaches as well as the limitations of scanning electron microscopy (SEM) and atomic force microscopy (AFM) to measure topographic details of structures on lithographic masks and wafers aiming at uncertainties in the nanometre range or even below. In the first approximation, the SEM signal, that is the change of secondary electron (SE) yield, is interpreted as being due to the surface tilt contrast and SE diffusion from the sidewall. The signal is biased by the width of the initial electron beam and, in the case of smaller penetration depths of the initial electron beam, also by the corner rounding of the specimen. Oscillation mode AFMs have been operated such that steep edge regions could be resolved better than with standard scanning methods. A single-point probing strategy enables the instrument to approach the surface from any direction and to leave the probe in the interaction region for a minimum of time maintaining the tip geometry. The ambiguity of the AFM measurement due to the changing response behaviour of the oscillating probe at differing geometries is discussed.

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Calibration of a dual probe NanoCaliper AFM for CD metrology

Cited by 5 publications

References 1 publication

Advances in the atomic force microscopy for critical dimension metrology

Advances in the atomic force microscopy for critical dimension metrology

Computational Models of a Nano Probe Tip for Static Behaviors

Current limitations of SEM and AFM metrology for the characterization of 3D nanostructures

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