We analyzed dopant segregation at semiconductor interfaces by equilibrating chemical potentials of dopants and electrons on each side of the interface. We apply the theory to Si/strained-SiGe interfaces and compare the predictions with existing experimental data. The calculations include changes in effective density of states ͑with particular attention to high-temperature hole effective mass͒, band-gap narrowing due to composition and temperature, and lattice parameter changes. We find that strong B segregation is dominated by stress effects, while moderate P or As segregation is dominated by changes in electronic band structure. We also observe that calculated stress energy is nearly temperature independent.