Calculation of two-dimensional maps of diffuse scattering by a real crystal with microdefects and comparison of results obtained from three-crystal diffractometry

Kladko, V. P.; Datsenko, L. I.; Bąk‐Misiuk, J.; Olikhovskii, S. I.; Machulin, V. F.; Prokopenko, I. V.; Molodkin, V. B.; Maksimenko, Z.V.

doi:10.1088/0022-3727/34/10a/318

Cited by 18 publications

(22 citation statements)

References 13 publications

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“…The detailed analysis of the XRD spectra inherent to the samples S1 and S2 suggest the presence of few types of microdefects. For example, the microdefects of small and large radius have a dominant effect on the spectra tail far and close to the Bragg position, respectively [34]. However, consideration of more types of microdefects sufficiently complicates the XRD spectra fitting and interpretation of results.…”

Section: Resultsmentioning

confidence: 99%

The effect of ion implantation on structural damage of сompositionally graded AlGaN layers

Liubchenko¹

2019

Semicond. Phys. Quantum Electron. and Optoelectron.

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Compositionally graded Al x Ga 1-x N alloys with the Al concentration in the (7 ≤ x ≤ 32) range were implanted with Ar + ions to study the structural and strain changes (strain engineering). It was shown that ion implantation leads to ~0.3…0.46% hydrostatic strains and a relatively low damage of the crystal structure. The ion-implantation leads mainly to an increase of the density of point defects, while the dislocation configuration is almost unaffected. The density of microdefects is sufficiently reduced after the postimplantation annealing. The structural quality of the Al x Ga 1-x N layers strongly depends on the Al concentration and is worsen with increasing Al. The implantation induced structural changes in highly dislocated Al x Ga 1-x N layers are generally less pronounced. Based on the X-ray diffraction, a model is developed to explain the strain field behavior in the Al x Ga 1-x N/GaN heterostructures by migration of point defects and strain field redistribution. The approach to simulate 2θ/ω scans using statistical dynamical theory of X-ray diffraction for implanted compositionally graded structures AlGaN has been developed.

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Section: Resultsmentioning

confidence: 99%

The effect of ion implantation on structural damage of сompositionally graded AlGaN layers

Liubchenko¹

2019

Semicond. Phys. Quantum Electron. and Optoelectron.

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“…Вжигание контактов осуществлялось при T = 350 • C (образцы, прошедшие диффузию при T = 900 и 925 • C) и T = 450 • C (образцы, прошедшие диффузию при 950 и 970 • C) в вакууме 10 −4 Па в течение 10 мин [11]. Структурное совершенство образцов исследовалось методом высокоразрешающей рентгеновской дифракции на дифрактометре Panalitycal X'Pert PRO MRD [11,12]. ρ c (T ), предсказываемых теорией [1].…”

Section: образцы и методы исследованияunclassified

Особенности температурной зависимости удельного контактного сопротивления диффузионных кремниевых структур Au-Ti-Pd-n-=SUP=-+-=/SUP=--n-Si

Беляев¹,

Болтовец²,

Kladko³

et al. 2019

Журнал Технической Физики

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The temperature dependences of the specific contact resistance of silicon ρ_ c with a doping step are measured experimentally and described theoretically. The measurements are performed in the temperature range from 4.2 to 380 K. It is established that the contacts of the studied Au–Ti–Pd– n ^+– n -Si structures are ohmic. It is shown that minimal ρ_ c is implemented at T = 75 K. Its value rises both with a decrease in temperature (due to the freezing effect) and with an increase in temperature (due to the electron-enriched layer at the boundary with the bulk material). It is established that the bulk electron concentration strongly decreases in the near-contact region in a layer with a thickness on the order of one micron due to the compensation of silicon by deep acceptors appearing because of the formation of a rather high vacancy concentration during stress relaxation and the appearance of a high dislocation density, as well as due to their diffusion from the contact after heating to 450°C. The data on the occurrence of vacancy-type defects are confirmed by X-ray measurements. The dislocation density in the studied structures is also estimated from X-ray measurements.

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“…(28) can be easily found by iteration. The iteration procedure is performed by using the solution (29) for the first layer adjacent to the substrate as the boundary condition for equation in the second layer, etc.…”

Section: Influence Of Distorted Thin Surface Layermentioning

confidence: 99%

Dynamical Theory of Triple-Crystal X-ray Diffractometry and Characterization of Microdefects and Strains in Imperfect Single Crystals

Molodkin¹,

Olikhovskii²,

Len³

et al. 2016

Metallofiz. Noveishie Tekhnol.

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A short review of basic principles and limitations in obtaining the analytical expressions for the coherent and diffuse scattering intensities measured by the triple-crystal diffractometer (TCD) are presented. Explicit analytical expressions are given for both the diffuse components of TCD profiles and the reciprocal-lattice maps measured within the Bragg diffraction geometry from crystals containing microdefects of several types. These formulas are derived by using the generalized dynamical theory of X-ray scattering by imperfect crystals with randomly distributed microdefects. Some examples demonstrating possibilities of the developed theory for quantitative characterization of structural imperfections in real single crystals are represented. In particular, characteristics of the complicated microdefect structures fabricated in various silicon crystals grown by Czochralski technique and floating-zone melting method are determined by analytical treatment of the measured TCD profiles, rocking curves, and reciprocal space maps.Key words: dynamical scattering, triple-crystal diffractometer, double-crystal diffractometer, microdefects.В роботі представлено короткий огляд основних принципів, що використо-вуються при одержанні аналітичних виразів для когерентної та дифузної інтенсивностей розсіяння, виміряних трикристальним дифрактометром (ТКД). Одержано точні аналітичні вирази для дифузних компонент як ТКД-профілів, так і мап оберненого простору, виміряних у геометрії дифракції за Бреґґом для кристалів, які містять мікродефекти декількох типів. Ці фор-мули одержано при використанні узагальненої динамічної теорії розсіяння Рентґенових променів неідеальними кристалами з випадково розподілени-ми мікродефектами. Представлено деякі приклади, які демонструють мож-ливості розробленої теорії для кількісної характеризації недосконалостей структури в реальних монокристалах. Зокрема, шляхом аналітичного обро-бляння виміряних ТКД-профілів, кривих відбивання і мап оберненого прос-тору визначено характеристики складних структур мікродефектів, створе-них у кристалах силіцію методами Чохральського і зонного топлення.Ключові слова: динамічне розсіяння, трикристальний дифрактометр, двок-ристальний дифрактометр, мікродефекти.В работе представлен краткий обзор основных принципов, используемых при получении аналитических выражений для когерентной и диффузной интенсивностей рассеяния, измеряемых трёхкристальным дифрактомет-ром (ТКД). Получены точные аналитические выражения для диффузных компонент как ТКД-профилей, так и карт обратного пространства, изме-ренных в геометрии дифракции по Брэггу для кристаллов, содержащих микродефекты нескольких типов. Эти формулы получены при использова-нии обобщённой динамической теории рассеяния рентгеновских лучей не-идеальными кристаллами со случайно распределёнными микродефектами. Представлены некоторые примеры, демонстрирующие возможности разра-ботанной теории для количественной характеризации несовершенств структуры в реальных монокристаллах. В частности, путём аналитической обработки измеренных ТКД-...

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Calculation of two-dimensional maps of diffuse scattering by a real crystal with microdefects and comparison of results obtained from three-crystal diffractometry

Cited by 18 publications

References 13 publications

The effect of ion implantation on structural damage of сompositionally graded AlGaN layers

The effect of ion implantation on structural damage of сompositionally graded AlGaN layers

Особенности температурной зависимости удельного контактного сопротивления диффузионных кремниевых структур Au-Ti-Pd-n-=SUP=-+-=/SUP=--n-Si

Dynamical Theory of Triple-Crystal X-ray Diffractometry and Characterization of Microdefects and Strains in Imperfect Single Crystals

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