Calculation of the magnetization of the layered III-VI diluted magnetic semiconductorGa1−xMnxS

Explorations of the magnetization of Ga1−xMnxS over a wide range of concentrations, 0.008<x<0.18

“…This work is an extension of an earlier theoretical and experimental work 8 on the magnetization of Ga 1−x Mn x S which was carried out at one value of x. Here we present magnetization results for Ga 1−x Mn x S for 0.008Ͻ x Ͻ 0.18.…”

“…The choice of Mn +3 rather than Mn +2 was discussed earlier. 8 The substitutional manganese atoms are believed to be covalently bonded to their four nearest-neighbor atoms. 17 The incomplete 3d valence shell of the Mn gives rise to the magnetic moment of the sample.…”

“…It should be noted that was adjusted from the free-ion value to account for the fact that the Mn ion is in a crystal lattice. The operator equivalent crystal-field Hamiltonian takes the form, 8 H crystal = b͓3L z 2 − L͑L + 1͔͒ + a͕35L z…”

“…Previously a model of the magnetization of III-VI DMSs was formulated 8 for a single choice of concentration. In this paper the model is compared with the measurements of the magnetization of the III-VI DMS, Ga 1−x Mn x S, over a wide range of concentrations.…”

Magnetic and transport measurements on the layered III-VI diluted magnetic semiconductor In1−xMnxSe

“…12 In this work we present magnetic and transport measurements on In 1−x Mn x Se. This builds on recent measurements in In 1−x Ga x Se and expands the exploration of the class of III-VI DMS into the fourth III-VI DMS system investigated to date complementing previous work on Ga 1−x Mn x Se, 1 Ga 1−x Mn x S, 18,19 and Ga 1−x Fe x Se. 20 This class of diluted magnetic semiconductors has already exhibited behavior different from those of the II-VI DMS and III-V DMS that have been studied more extensively.…”