Calculation of the capacitances of conductors: Perspectives for the optimization of electronic devices

Kopp, Thilo; Mannhart, J.

doi:10.1063/1.3197246

Cited by 84 publications

(103 citation statements)

References 68 publications

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“…In order to obtain the curvature and area correction at the spillover surface, let us consider Γ m a convex body in the three-dimensional Euclidean space R 3 , with regular boundary ∂Γ m ∈ C 2 and principal radii of curvature R 1 The relative area increase is…”

Section: Appendix a Supporting Materials (A) Curvature Of A Curvementioning

confidence: 99%

Shape- and size-dependent electronic capacitance in nanostructured materials

Singh

Kant

2013

Proc. R. Soc. A.

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The shape and size are the two important geometrical factors that affect the electronic screening in nanomaterials. Here, we develop an analytical theory for electronic capacitance based on Thomas-Fermi screening in conjunction with 'multiple scattering method' for arbitrary-shaped nanostructures including electronic spillover correction. We relate the electronic capacitance of the material to the curvature correction expressed in terms of ratio of electronic screening length to principal radii of curvature. Electronic capacitance of various nanostructures is obtained showing geometrical shape-and sizedependent electronic screening in nanostructures that manifest important consequences in charge storage enhancement or reduction.

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Section: Appendix a Supporting Materials (A) Curvature Of A Curvementioning

confidence: 99%

Shape- and size-dependent electronic capacitance in nanostructured materials

Singh

Kant

2013

Proc. R. Soc. A.

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“…Its origin has been attributed to many factors including minority carrier flow, interface states, slow transition time of injected carriers, charge trapping and space charge [24][25][26]. It was also shown that NC could appear if the conductivity is inertial (i.e.…”

Section: Resultsmentioning

confidence: 99%

Electrically tunable sign of capacitance in planar W-doped vanadium dioxide micro-switches

Soltani

Chaker

Margot

2011

Science and Technology of Advanced Materials

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Negative capacitance (NC) in a planar W-doped VO 2 micro-switch was observed at room temperature in the low-frequency range 1 kHz-10 MHz. The capacitance changed from positive to negative values as the W-doped VO 2 active layer switched from semiconducting to metallic state under applied voltage. In addition, a capacitance-voltage hysteresis was observed as the applied voltage was cycled from −35 to 35 V. These observations suggest that NC results from the increase of the electrically induced conductivity in the active layer. This NC phenomenon could be exploited in advanced multifunctional devices including ultrafast switches, field-effect transistors and memcapacitive systems.

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“…The enhancement of the semiconductor capacitance could be traced quan-titatively to the presence of quantum exchange effects in the electrodes. The contribution from electronic correlations to the capacitance is not negligible for very dilute electron systems [15] and for electronic systems close to half-filling [17]. However, the charge density at LaAlO 3 /SrTiO 3 interfaces is in the intermediate range, neither as low as in the semiconductor systems [14] nor close to half-filling.…”

Section: Introductionmentioning

confidence: 93%

“…Notice that the capacitance derived from the microscopic model is smaller than the geometric capacitance, since the kinetic energy of the charge carriers in the electrodes adds a positive term to the inverse capacitance (see, e.g., Ref. [15]). …”

Section: Multiband Layer With Spin-orbit Couplingmentioning

confidence: 99%

Spin-orbit controlled quantum capacitance of a polar heterostructure

2015

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Oxide heterostructures with polar films display special electronic properties, such as the electronic reconstruction at their internal interfaces with the formation of two-dimensional metallic states. Moreover, the electrical field from the polar layers is inversion-symmetry breaking and generates a Rashba spin-orbit coupling (RSOC) in the interfacial electronic system. We investigate the quantum capacitance of a heterostructure in which a sizeable RSOC at a metallic interface is controlled by the electric field of a surface electrode. Such a structure is, for example, given by a LaAlO3 film on a SrTiO3 substrate which is gated by a top electrode. Such heterostructures can exhibit a strong enhancement of their capacitance [1]. The capacitance is related to the electronic compressibility of the heterostructure, but the two quantities are not equivalent. In fact, the transfer of charge to the interface controls the relation between capacitance and compressibility. We find that due to a strong RSOC, the quantum capacitance can be larger than the classical geometric value. However, in contrast to the results of recent investigations [9-11] the compressibility does not become negative for realistic parameter values for LaAlO3/SrTiO3 and, therefore, we find that no phase-separated state is induced by the strong RSOC at these interfaces.

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Calculation of the capacitances of conductors: Perspectives for the optimization of electronic devices

Cited by 84 publications

References 68 publications

Shape- and size-dependent electronic capacitance in nanostructured materials

Shape- and size-dependent electronic capacitance in nanostructured materials

Electrically tunable sign of capacitance in planar W-doped vanadium dioxide micro-switches

Spin-orbit controlled quantum capacitance of a polar heterostructure

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