Calculation of surface potential and beam deflection due to charging effects in electron beam lithography

Lee, Yong Jae; Lee, Woojin; Chun, Kukjin

doi:10.1116/1.1319822

Cited by 12 publications

(9 citation statements)

References 12 publications

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“…This charge-induced beam deflection manifests into underexposure or enlarged line dimensions. Numerous studies have been conducted on the charging effect of electron beam lithography, relating surface potential to beam deflection~Liu et Lee et al, 2000;Masatoshi, 2001!. These reports attempted to study the effect of charging by creating a charging model with the surface potential obtained through simulations or from measurements directly on the sample.…”

Section: Introductionmentioning

confidence: 99%

The Impact of Charging on Low-Energy Electron Beam Lithography

Mun¹,

Drouin²,

Lavallée³

et al. 2004

Microsc Microanal

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A major issue in low voltage lithography is surface charging, which results in beam deflection presented as uneven exposure between adjacent structures. In this study, charge-induced pattern distortions in low-voltage energy beam lithography (LVEBL) were investigated using a silicide direct-write electron beam lithography process. Two methodologies have been proposed to avert charging effects in LVEBL, namely, pattern randomizing and lithography using the crossover voltage. Experimental results demonstrated that these methods are effective in significantly reducing the problems associated with charging. They indicate that charging on a sample is a function of time interval and proximity between line structures. In addition, the optimum time and distance between exposures for no charge-induced pattern distortion were determined. By using the crossover voltage of the material for lithography, charging effect can be significantly minimized.

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Section: Introductionmentioning

confidence: 99%

The Impact of Charging on Low-Energy Electron Beam Lithography

Mun¹,

Drouin²,

Lavallée³

et al. 2004

Microsc Microanal

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“…3,[10][11][12] Before processing is begun, Eqs. If it is assumed that the deformation is elastic, a measurement in process of the residual thin film stresses of each layer, then divided by the appropriate elastic modulus, can be substituted for the expressions for residual strain in these equations.…”

Section: ͑2͒mentioning

confidence: 99%

Mitigation of residual film stress deformation in multilayer microelectromechanical systems cantilever devices

Pulskamp

Wickenden

Polcawich

et al. 2003

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Residual stress relaxation in the film/substrate system due to creep deformation An approach to compensate for the residual thin film stress deformation of multilayer microelectromechanical systems ͑MEMS͒ devices is presented based upon analytical and numerical modeling and in-process thin film characterization. Thermal and intrinsic deposition stresses can lead to the warping of released MEMS structures. This detrimental phenomenon in many cases can prevent proper device operation. Ellispsometric and laser wafer bow measurements yield thickness and film stress values that are used to update the deflection model during device fabrication, allowing for the compensation of the fabrication process variability. The derivations of linear and nonlinear residual film stress induced deflection models are presented. These models are based upon Bernoulli-Euler beam theory and are thus restricted to the associated geometric constraints. The models are initially validated by comparison with surface micro-machined sol-gel lead-zirconatetitanate cantilever structures; with initial experimental results agreeing well with both.

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“…However, the precise understanding has not been accomplished yet. Recently, some simulations have been developed to explain certain experimental results~Kotera & Suga, 1988;Liu et al, 1995;Ko et al, 1998;Kotera, 1998;Bai et al, 1999;Kotera et al, 1999;Lee et al, 2000;Mkrtchyan, 2000!. The mask charging phenomena in EPL optics have been discussed by several authors~Lee et al, 2000; Mkrtchyan, 2000!.…”

Section: Introductionmentioning

confidence: 99%

Mask Charging Phenomena during Electron Beam Exposure in the EPL System

Kotera¹,

Ishida²

2004

Microsc Microanal

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Charging phenomena of a mask material during electron beam exposure are analyzed in an electron beam projection lithography system. First, the three-dimensional charge deposition distribution by the electron beam irradiation is obtained. Next, in every time step, the distributions of the accumulated charge and the potential are obtained considering the current flow due to the diffusion and the drift. As a narrow bridge pattern defined in a 5 μm × 5 μm area is assumed to lay out all over the field of 1 mm × 1 mm and the potential is grounded at the circumference of the field (1 mm × 1 mm × 1 mm), the saturated potential distribution is obtained at the central 5 μm × 5 μm area in the field. The maximum potential attained is around 4.23 μV at the center of the bridge, if the accelerating voltage of the electron beam is 100 kV, the current density is 10 A/cm2, and the material of the mask is the intrinsic Si. The contribution of the charging may be negligible to the electron beam with such a high accelerating voltage, which is going through the opening beside the bridge pattern in the projection lithography.

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Calculation of surface potential and beam deflection due to charging effects in electron beam lithography

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Cited by 12 publications

References 12 publications

The Impact of Charging on Low-Energy Electron Beam Lithography

The Impact of Charging on Low-Energy Electron Beam Lithography

Mitigation of residual film stress deformation in multilayer microelectromechanical systems cantilever devices

Mask Charging Phenomena during Electron Beam Exposure in the EPL System

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