2020 IEEE 21st Workshop on Control and Modeling for Power Electronics (COMPEL) 2020
DOI: 10.1109/compel49091.2020.9265797
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Calculation of Planar Transformer Capacitance Based on the Applied Terminal Voltages

Abstract: In order to calculate the parasitic capacitors of a transformer, it is important to apply the correct transformer terminal voltages such that only the desired lumped capacitors are charged. This paper shows the correct transformer terminal voltages that match measurement scenarios that are widely used to extract lumped capacitor values. The parasitic capacitors are calculated based on the stored energy in the transformer windings for different measurement scenarios. A 5kW heavily interleaved high turns-ratio p… Show more

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Cited by 6 publications
(2 citation statements)
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“…A Bbox RCP system platform was used to implement SPS modulation and test different switching frequencies at different phase-shifts, to achieve similar i p , i s , and output power. We used the instruments LPA05 Impedance Analyzer, PSM1735, and N4L Impedance Analysis Interface to estimate the parameters of a transformer (based on [30]) and two inductances of 3.3 µH and 4.7 µH (see Tables I and II). The instruments cannot measure capacitance values smaller than 100 pF and resistances lower than 1 mΩ, so for the inductors, we used the datasheet values for the copper losses, and the self-resonance frequency and inductor value to estimate the stray capacitance.…”
Section: Resultsmentioning
confidence: 99%
“…A Bbox RCP system platform was used to implement SPS modulation and test different switching frequencies at different phase-shifts, to achieve similar i p , i s , and output power. We used the instruments LPA05 Impedance Analyzer, PSM1735, and N4L Impedance Analysis Interface to estimate the parameters of a transformer (based on [30]) and two inductances of 3.3 µH and 4.7 µH (see Tables I and II). The instruments cannot measure capacitance values smaller than 100 pF and resistances lower than 1 mΩ, so for the inductors, we used the datasheet values for the copper losses, and the self-resonance frequency and inductor value to estimate the stray capacitance.…”
Section: Resultsmentioning
confidence: 99%
“…Medium-Voltage (MV) Silicon Carbide (SiC) Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) acquire significant intrinsic properties, making it viable to intensify the switching frequency of converters from a few hundred kHz to the MHz region [20], [21]. Nonetheless, with every upgrade, researchers encounter challenges and restrictions to achieve enhanced power converter designs.…”
Section: Electromagnetic Compatibility Adherencementioning
confidence: 99%