Calculation of hopping transport coefficients

Butcher, P N

doi:10.1080/01418638008222328

Cited by 33 publications

(3 citation statements)

References 59 publications

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“…The percolation theory [15,16] leads to values of s well below the quoted value of 0.8 of Pollak and Geballe. The values of s are determined by the factor n 9 s-11 3 is low (0.5, 1, or 2 for carrier concentration of 5x10' 5 , 3.7x10 14 , and lx10 14 cm-3 in Si and 5 in Ge), and according to the calculation of Butcher [15,16], s•_< 0.3. This is close to the low values of s that we have observed here.…”

Section: A Silicon and Germaniummentioning

confidence: 81%

Frequency Dependence of Hopping Conductance in Electron Irradiated Semiconductors

Kouimizi

Thomson²

1988

MRS Proc.

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Section: A Silicon and Germaniummentioning

confidence: 81%

Frequency Dependence of Hopping Conductance in Electron Irradiated Semiconductors

Kouimizi

Thomson²

1988

MRS Proc.

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“…Hall effect in the hopping conductance regime was calculated in a number of works [17][18][19][20][21][22][23]. It is commonly considered that in macroscopically homogeneous material the hopping Hall effect is related to self-interference of the electron wave function, propagating along different paths with at least three localization centers taken into account [17].…”

Section: Resultsmentioning

confidence: 99%

Scaling of the Hall effects beyond the quantum resistance threshold in oxidized CoFeB

Gerber¹,

Kopnov²

2017

Phys. Rev. B

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The ordinary and the extraordinary Hall effects were studied in gradually oxidized amorphous CoFeB ferromagnets over six orders of resistivity from the metallic to the strongly insulating regime. Polarity of the extraordinary Hall effect reverses, and the amplitude of both the ordinary and the extraordinary Hall effects increases quadratically with resistivity when resistance exceeds the quantum resistance threshold ℎ 2 2 ⁄ . The absolute value of the extraordinary Hall effect scales linearly with the ordinary one in the entire range over eight orders of magnitude between the metallic and the insulating states. The behavior differs qualitatively and quantitatively from theoretically predicted and experimentally known in other materials. PACS: 73.50.-h; 75.76.+j; 75.50.Kj 2 Introduction.Hall effect is the major source of information on a type and density of charge carriers.Regretfully, our knowledge of the phenomenon in strongly disordered conductors is quite poor as experimental data are scarce and sometimes controversial. The reason is essentially technical: for any practical arrangement of electric contacts, there is an unavoidable geometrical mismatch in positioning of transverse to current (Hall) probes.Since longitudinal electric field is usually much larger than the transverse one, a relatively small Hall signal is hidden on a background of the longitudinal resistance noise. Thus, practically no data are available on the insulating side of the metalinsulator transition for resistivity exceeding 0.1 -1 Ωcm. Absence of data does not reflect an absence of interest, as a number of puzzling phenomena, like an existence of the Hall insulator state [1-3], double reversal of Hall effect polarity [4, 5] and the giant Hall effect [6] were pointed out but remained unresolved. Availability of the extraordinary Hall effect (EHE) data in ferromagnetic systems is somewhat better, sincethe effect is usually much larger than the ordinary Hall effect and is easier to measure.An impression has been created that recent theoretical models [7 -10] provide

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“…where the critical percolation exponent f p is determined by the percolation criterion (cf. Butcher [17])…”

Section: 'mentioning

confidence: 99%

Modifications of the hopping conductivity due to long‐range coulomb interactions

Goedsche

1987

Physica Status Solidi (b)

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The conductivity law derived by Efros and Shklovskii for variable-range hopping (VRH) in the presence of long-range Coulomb interaction is modified to take into account new numerical results for the density of single-particle states (DOS) within the Coulomb gap. The characteristic temperatures appearing in this modified VRH law, including limiting temperatures for the applicability of VRH, are expressed in terms of DOS parameters, localization length and dielectric constant. The results are compared with experimental studies in crystalline and amorphous semiconductors.Das von Efros und Shklovskii fur Variable-Range-Hopping (VRH) in Anwesenheit langreichweitiger Coulomb-Wechselwirkung abgeleitete Leitfahigkeitsgesetz wird unter Beriicksichtigung neuer numerischer Ergebnisse fur die Einteilchenzustandsdichte im Coulomb-Gap modifiziert. Die im modifizierten VRH-Gesetz auftretenden charakteristischen Temperaturen, einscbliel3lich die Grenztemperaturen fur die Anwendbarkeit von VRH, werden als Funktionen der Zustandsdichteparameter, der Lokalisationsliinge und der Dielektrizitatskonstante abgeschktzt. Ein Vergleich mit experimentellen Untersuchungen an kristallinen und amorphen Halbleitern wird durchgefiihrt.

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Calculation of hopping transport coefficients

Cited by 33 publications

References 59 publications

Frequency Dependence of Hopping Conductance in Electron Irradiated Semiconductors

Frequency Dependence of Hopping Conductance in Electron Irradiated Semiconductors

Scaling of the Hall effects beyond the quantum resistance threshold in oxidized CoFeB

Modifications of the hopping conductivity due to long‐range coulomb interactions

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