Calculation of GaInSb PNP lateral HBT for complementary bipolar logic technology

Abstract

In this study, the power consumption and speed of a GaInSb PNP lateral heterojunction bipolar transistor were estimated for applications in complementary bipolar logic circuits. At the supply voltage of 250 mV, the current gain is over 1,000, on/off power consumption ratio is approximately 180, and delay time is 2.6 ps. However, the characteristics degrade rapidly at voltages greater than 300 mV, owing to deep saturation and high-level injection.