Calculation of Electron Mobility for the Strained Germanium Nanofilm

Luniov, S. V.

doi:10.21272/jnep.11(2).02023

Cited by 3 publications

(9 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…That is, such nanofilms will be dielectrics in terms of their electrical conductivity, especially when their thickness is d < 7 nm. The increase in the intrinsic carrier concentration for the strained Ge nanofilms with the thickness d > 7 nm vs unstrained ones is explained, first of all, by the decrease of the band gap due to internal mechanical strains [19]. The maximum relative increase of the concentration of intrinsic current carriers is observed for the Ge/Si nanofilm because in this case the magnitude of internal mechanical strains is the largest, and the band gap of such nanofilm will be the smallest compared to Ge/Ge(0.9)Si(0.1) and Ge/Ge(0.64)Si(0.36) nanofilms.…”

Section: Resultsmentioning

confidence: 95%

“…4, 5. The electron mobility decreases with increasing silicon content in the substrate, and hence the magnitude of internal mechanical strains in such nanofilms [19], and is virtually independent of the thickness as well as temperature.…”

Section: Resultsmentioning

confidence: 99%

“…The value b1 = 0.088 was calculated in [19] for the case of electron scattering on acoustic phonons. The values of constants b2 and b3 can be similarly calculated.…”

mentioning

confidence: 99%

“…It was shown in [19] that the mobility of electrons in the L1 minimum of the conduction band can be presented as:…”

mentioning

confidence: 99%

“…The expressions for L a ⊥ in Eq. ( 16) are presented in the appendix of [19]).…”

mentioning

confidence: 99%

See 4 more Smart Citations

Electrical properties of strained germanium nanofilm

Luniov

Nazarchuk

Burban

2021

Phys. Chem. Solid St.

View full text Add to dashboard Cite

Dependences of the concentration of intrinsic current carriers, electron and hole mobilities and specific conductivity for strained germanium nanofilms grown on the Si, Ge(0,64)Si(0,36) and Ge(0,9)Si(0,1) substrates with crystallographic orientation (001), on their thickness at different temperatures were calculated on the basis of the statistics of non-degenerate two-dimensional electron and hole gas in semiconductors. The electrical properties of such nanofilms are determined by the peculiarities of their band structure. It is established that the effects of dimensional quantization, the probability of which increases with decreasing temperature, become significant for germanium nanofilms with the thickness of d<7 nm. The presence of such effects explains the significant increase in the specific conductivity and the decrease in the intrinsic concentration of current carriers for these nanofilms. The electron and hole mobility in the investigated germanium nanofilms is lower in relation to such unstrained nanofilms. Only for the strained germanium nanofilm with the thickness of d> 50 nm grown on the Ge(0,9)Si(0,1) substrate, an increase in the hole mobility at room temperature of more than 1.5 times was obtained. The obtained results of the electrical properties of strained germanium nanofilms can be used in producing on their basis new elements of nanoelectronic.

show abstract

Section: Resultsmentioning

confidence: 95%

Section: Resultsmentioning

confidence: 99%

“…The value b1 = 0.088 was calculated in [19] for the case of electron scattering on acoustic phonons. The values of constants b2 and b3 can be similarly calculated.…”

mentioning

confidence: 99%

“…It was shown in [19] that the mobility of electrons in the L1 minimum of the conduction band can be presented as:…”

mentioning

confidence: 99%

“…The expressions for L a ⊥ in Eq. ( 16) are presented in the appendix of [19]).…”

mentioning

confidence: 99%

See 3 more Smart Citations

Electrical properties of strained germanium nanofilm

Luniov

Nazarchuk

Burban

2021

Phys. Chem. Solid St.

View full text Add to dashboard Cite

show abstract

Mechanisms of electron scattering in uniaxially deformed n-Ge⟨Sb, Au⟩ single crystals

Luniov¹,

Nazarchuk²,

Zimych³

et al. 2019

Condens. Matter Phys.

View full text Add to dashboard Cite

Temperature dependencies for concentration and the Hall mobility of electrons for the n-Ge Sb and n-Ge Sb, Au single crystals uniaxially deformed along the crystallographic directions [100] and [111] are obtained on the basis of piezo-Hall effect measurements. A deformation-induced increase of the Hall mobility of electrons for n-Ge Sb, Au single crystals at the uniaxial pressure along the crystallographic direction [100] has been revealed. A comparison of the obtained experimental results with the corresponding theoretical calculations of temperature dependencies of the Hall mobility showed that the obtained effect occurs at the expense of the reduction probability of electron scattering on the fluctuational potential. Its amplitude depends on the temperature and on the value of the uniaxial pressure. It has also been shown that an increase of the Hall mobility for the n-Ge Sb, Au single crystals uniaxially deformed along the crystallographic direction [111] with an increasing temperature turns out to be insignificant and is observed only for the uniaxial pressures P < 0.28 GPa. A decrease of the Hall mobility of electrons at the expense of the deformational redistribution of electrons among the valleys of the germanium conduction band with different mobility should be taken into account in the present case. The Hall mobility magnitude for the uniaxially deformed n-Ge Sb single crystals is determined only by the mechanisms of phonon scattering and we have not observed the effect of the growth of the Hall mobility with an increase of temperature or the magnitude of uniaxial pressure. This demonstrates a secondary role of the fluctuational potential in the present case.

show abstract

The Influence of Mechanical Strains and Quantum-Size Effects on the Photosensitivity of Ge/Ge(x)Si(1-x) Nanofilm

LUNIOV,

SHYGORIN,

VENHRYN

2024

Rom. J. Phys.

View full text Add to dashboard Cite

Calculations of the maximum light wavelength of intrinsic absorption for the unstrained and strained germanium nanofilm were carried out. It was established that the photosensitivity of such nanofilm with the thickness of d 10 nm significantly depends on the effects of dimensional quantization and the magnitude of internal mechanical strains. It is shown that the variation of the thickness of the germanium nanofilm and the component composition of the Ge(x)Si(1–x) substrate allow controlling by its photosensitivity in the range from 0.8 to 4 μm.

show abstract

Calculation of Electron Mobility for the Strained Germanium Nanofilm

Cited by 3 publications

References 0 publications

Electrical properties of strained germanium nanofilm

Electrical properties of strained germanium nanofilm

Mechanisms of electron scattering in uniaxially deformed n-Ge⟨Sb, Au⟩ single crystals

The Influence of Mechanical Strains and Quantum-Size Effects on the Photosensitivity of Ge/Ge(x)Si(1-x) Nanofilm

Contact Info

Product

Resources

About