Calculation of dielectric constant of buffer layer graphene on SiC measured by spectroscopy ellipsometry using Gauss-Newton numerical inversion method

Abstract

-Calculation of dielectric constant of buffer layer graphene on SiC substrate measured by Spectroscopic Ellipsometry using Gauss-Newton inversion method has been done. The data obtained from spectroscopic ellipsometry measurement are amplitude ratio (Ψ) and phase difference (Δ). The results show that Gauss-Newton numerical inversion method can be used to extract the dielectric constant of nanostructured graphene on SiC substrates (in this case buffer layer graphene). Through the Gauss-Newton numerical inversion method, we obtain the thickness of buffer layer is around 0.5 to 1 ML and has different dielectric constant value as compared to that of graphene films.

Probing the dielectric response of the interfacial buffer layer in epitaxial graphene via optical spectroscopy

“…A variety of theoretical studies have also been performed on the electronic structure of the IBL in 6H-, 4H-, and 3C-SiC substrates [25–30]. While the electronic properties are relatively known, there are significantly fewer works reported on the optical properties of the IBL, and one of those works characterizes the Raman signature of the IBL [31–33]. …”