Calculation of band bending in ferroelectric semiconductor

Effect of Internal Electric Fields on Charge Carrier Dynamics in a Ferroelectric Material for Solar Energy Conversion

“…[ 40 ] Such dependencies of P S and surface potential upon temperature have also been supported by theoretical modeling based on treating the ferroelectric medium as a polar semiconductor. [ 41 ] Regarding the absolute magnitude of the band bending in BaTiO 3 resulting from P S , reported values at room temperature measured under vacuum conditions are of the order of 1.3 V in total or 0.65 V at each interface. [ 40 ] We note that band bending is typically reduced under atmospheric conditions, such as those employed herein, by external screening due to molecular chemisorption to the BaTiO 3 surface.…”

Photovoltaic effects in BiFeO3

“…20 To estimate the carrier density in BFO ͑N D ͒ frequency-dependent capacitance-voltage ͑C-V͒ measurements were carried out and Mott-Schottky plots were created by applying a 10 mV ͑rms͒ ac voltage superimposed on a dc voltage. By fitting the Mott-Schottky plots at 100 Hz, an ionizable impurity density of ϳ10 17 cm −3 ͑p-type in FIG.…”

Investigation of a distribution function suitable for acceptors in SiC

“…6,7 However, N A determined using f FD (⌬E A ) always has been much higher than the concentration of Al atoms (C Al ) determined by secondary ion mass spectroscopy. [6][7][8][9] This result conflicts with the fact that N A рC Al because N A is the density of Al atoms located at the substitutional sites in SiC. The situation in wide band gap semiconductors such as Mg-doped p-type GaN has also been the same.…”

“…10,11 In order to determine a reliable value for N A using p(T) in p-type SiC, the following two attempts have been made: ͑1͒ the experimental adjustment of Hall-scattering factor for holes 12,13 and ͑2͒ the theoretical introduction of a distribution function suitable for Al acceptors. 8,9,14,15 Moreover, Al atoms with high density may disturb the valence band structure near E V , and might form an impurity band. However, the p(T) for these p-type SiC samples exhibit a typical semiconductor behavior.…”