Calculating Activation Volumes and Activation Energies from Diffusion Measurements

Jeffery, Rondo N.; Lazarus, D.

doi:10.1063/1.1659390

Cited by 37 publications

(9 citation statements)

References 6 publications

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“…In the ensuing discussion we assume a single mechanism for simplicity. ‡ Neglecting variations in ν and λ is practically always justified [19,20], but the pressure-dependence of f may or may not be negligible, depending on whether there is a significant pressuredependence to the interaction between the impurity and the defect. This pressure effect is analogous to the additional term in the expression for the apparent activation enthalpy introduced by a significantly temperature-dependent binding, which has been analyzed by Hu [21].…”

Section: Stress Effects On Defects and Dopant Diffusion In Simentioning

confidence: 99%

Stress effects on defects and dopant diffusion in Si

Aziz

2001

Materials Science in Semiconductor Processing

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The effects of stress on equilibrium point defect populations and on dopant diffusion for single crystals free of extended defects are reviewed. The thermodynamic relationships presented permit the direct comparison of hydrostatic and biaxial stress experiments and of atomistic calculations under hydrostatic and nonhydrostatic stress for any proposed mechanism. Experiments on the effects of pressure and stress on the diffusivity are reviewed. For Sb in Si, using as input the measured effect of hydrostatic pressure on diffusion and the assumption of a pure vacancy mechanism, the measured effect of biaxial stress on diffusion can be predicted successfully with no free parameters. For B inSi, an apparent discrepancy between the hydrostatic and biaxial stress effects exists assuming a pure interstitial-based mechanism. The requirements to permit the prediction of the effect of an arbitrary stress state on diffusion in an arbitrary direction are discussed.

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Section: Stress Effects On Defects and Dopant Diffusion In Simentioning

confidence: 99%

Stress effects on defects and dopant diffusion in Si

Aziz

2001

Materials Science in Semiconductor Processing

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“…Neglecting variations in ν and λ is practically always justified [6,7], but the pressure-dependence of f may or may not be negligible, depending on whether there is a significant pressure-dependence to the interaction between the impurity and the defect 1 . The formation volume, V f , is the volume change in the system upon formation of a defect in its standard state; the migration volume, V m , is the additional volume change when the defect reaches the saddle point in its migration path.…”

Section: Diffusion Under Hydrostatic Pressurementioning

confidence: 99%

Pressure and Stress Effects on Diffusion in Si

Aziz¹

1997

DDF

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The thermodynamics of diffusion under hydrostatic pressure and nonhydrostatic stress is presented for single crystals free of extended defects. The thermodynamic relationships obtained permit the direct comparison of hydrostatic and biaxial stress experiments and of atomistic calculations under hydrostatic stress for any proposed mechanism. Atomistic calculations of the volume changes upon point defect formation and migration, and experiments on the effects of pressure and stress on the diffusivity, are reviewed. For Sb in Si, using as input the results of ab initio calculations of the effect of hydrostatic pressure on diffusion by the vacancy mechanism, the thermodynamic relationships successfully account for the measured effect of biaxial stress on diffusion with no free parameters. For other cases, missing parameters are enumerated and experimental and calculational procedures outlined.

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“…17 The trade-off between the strain relaxation process and the rate of Sb diffusion implies serious limitations for an independent determination of the activation enthalpies and prefactors for *D Si 1Ϫx Ge x Sb . However, it is generally accepted that stress ͑in the range of 1-2 GPa͒ does not significantly affect the prefactor of the diffusion coefficient, 18 and under this condition ⌬H dif determines the change of the diffusion coefficient as a function of . Thus, using the prefactors given in Ref.…”

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confidence: 99%