1986
DOI: 10.1063/1.337739
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Calculated quasi-eigenstates and quasi-eigenenergies of quantum well superlattices in an applied electric field

Abstract: We present a new technique utilizing computer simulations to determine the exact eigenstates of a quantum well superlattice of GaAs/AlGaAs in a perpendicular electric field. The technique is applied to quantify the tunability of a new infrared detector utilizing an intraconduction-band transition in the quantum well. Solutions found by this technique are compared with those found by a variational method and the Kronig–Penney model. The technique has several advantages over a conventional variational approach. … Show more

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Cited by 75 publications
(17 citation statements)
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“…The energy levels and the envelope functions of the subbands were calculated by the tunneling resonance method utilizing the transfer matrix technique. 37) The band nonparabolicity parameter NP was assumed to be 0.187 eV À138) both for GaN and AlN. After the charge distribution was calculated assuming a Fermi distribution at 300 K, Poisson's equation was solved.…”
Section: Effects Of the Electric Field And Interfacementioning
confidence: 99%
“…The energy levels and the envelope functions of the subbands were calculated by the tunneling resonance method utilizing the transfer matrix technique. 37) The band nonparabolicity parameter NP was assumed to be 0.187 eV À138) both for GaN and AlN. After the charge distribution was calculated assuming a Fermi distribution at 300 K, Poisson's equation was solved.…”
Section: Effects Of the Electric Field And Interfacementioning
confidence: 99%
“…[25][26][27] The entire system ͑see Fig. 1͒ is partitioned into layers sufficiently thin so that in each layer the flat potential approximation is used to determine the wave propagation vectors and full-zone basis expansion coefficients.…”
Section: Construction Of the Semiconductor Transfer Matricesmentioning
confidence: 99%
“…All of the above features are incorporated into the transmission coefficient by way of the transfer-matrix method. [25][26][27] A brief summary of the key results was presented in Ref. 28. In Sec.…”
Section: Introductionmentioning
confidence: 99%
“…It is very useful to apply to bulk semiconductors and superlattices for calculating the energy bands in single crystal materials (Kolbas and Holonyak, 1984;Harwit and Harris, 1986;Jun, 2004). According to the continuity of the wave function across the potential boundaries, one can obtain a set of four simultaneous linear homogeneous equations, which are expressible in the form of a 4 × 4 matrix (Cho and Prucnal, 1987).…”
Section: Introductionmentioning
confidence: 99%