CAICISS characterization of GaN films grown by pulsed laser deposition

Ohta, Jitsuo; Fujioka, Hiroshi; Furusawa, M.; Sasaki, Atsushi; Yoshimoto, Mamoru; Koinuma, Hideomi; Sumiya, Masatomo; Oshima, Masaharu

doi:10.1016/s0022-0248(01)02074-7

Cited by 25 publications

(18 citation statements)

References 13 publications

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“…Therefore, the substrates for growths of GaN films are limited to the chemically stable materials such as Al 2 O 3 in spite of the large lattice mismatches. Recently, we have found that the use of pulsed laser deposition (PLD) [4,5] leads to suppression of the nitridation reaction at the substrate surfaces [6][7][8][9][10]. This phenomenon is well understandable because growths with PLD proceed in a less reactive N 2 atmosphere.…”

Section: Pacsmentioning

confidence: 99%

Effect of AlN Buffer Layers on GaN/MnO Structure

Ito

Fujioka

Ohta

et al. 2002

phys. stat. sol. (c)

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PACS : 68.55.Jk; 81.15.Fg We have investigated the effect of AlN buffer layers on characteristics of GaN films grown on nearly lattice matched MnO (111) substrates by pulsed laser deposition (PLD). We have found that the polarity of the GaN films grown on the MnO substrates changes from the N-polarity to the Ga-polarity with the use of AlN buffer layers. Atomic force microscopy (AFM) observations and photoluminescence (PL) measurements have revealed that the surface morphology and the optical properties of the GaN films on MnO can be improved by the AlN buffer layers.Introduction GaN and its related compounds have attracted much attention because of their potential applications for light emitting devices with short wave length and power electronics. Epitaxial GaN thin films have been usually grown with metalorganic chemical vapor deposition (MOCVD) [1,2] or molecular beam epitaxy (MBE) [3]. These techniques utilize highly reactive nitrogen sources such as NH 3 or an N 2 plasma which cause nitridation of the substrate surfaces just before the epitaxial growths. Therefore, the substrates for growths of GaN films are limited to the chemically stable materials such as Al 2 O 3 in spite of the large lattice mismatches. Recently, we have found that the use of pulsed laser deposition (PLD) [4,5] leads to suppression of the nitridation reaction at the substrate surfaces [6][7][8][9][10]. This phenomenon is well understandable because growths with PLD proceed in a less reactive N 2 atmosphere. Hence, the use of PLD allows us to grow group III nitrides on various substrates that have not been tested with MOCVD or MBE [11,12]. Among new substrates, materials with small lattice mismatches with group III nitrides are especially attractive because we can expect improvement in crystalline quality.Using PLD, we recently showed that it is possible to grow GaN on MnO substrates [13]. We found that GaN (0001) epitaxially grew on MnO (111) with the epitaxial relationship which makes the lattice mismatches minimum (1.6%). However, the effectiveness in the use of buffer layers, which is a quite common technique for the epitaxial growth of group III nitrides, has not been reported so far. In this study, we discuss the effect of AlN buffer layers for the PLD growths of GaN on MnO (111) using various characterization techniques such as reflection high-energy electron diffraction (RHEED), atomic force microscopy (AFM), NaOH chemical etching, and photoluminescence (PL).

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Section: Pacsmentioning

confidence: 99%

Effect of AlN Buffer Layers on GaN/MnO Structure

Ito

Fujioka

Ohta

et al. 2002

phys. stat. sol. (c)

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“…To investigate the crystalline quality and the epitaxial relationship between group III nitrides and SrTiO 3 , we performed reflection high energy electron diffraction (RHEED), and high resolution X-ray diffraction (HRXRD) measurements. Figure 1 shows a RHEED pattern after the growth of 130 nm thick AlN with the electron beam incidence along the [11][12][13][14][15][16][17][18][19][20] direction. The RHEED pattern shows the clear spots, indicating that the growth of the AlN film proceeds in the three-dimensional mode.…”

Section: Methodsmentioning

confidence: 99%

“…This limits the substrates for the epitaxial growth of group III nitrides to chemically stable materials such as Al 2 O 3 , SiC and GaAs [3,4]. We have recently shown that the use of the PLD technique for the epitaxial growth of group III nitrides is advantageous over the conventional growth techniques in that it does not require highly reactive nitrogen sources [5][6][7][8][9][10][11]. PLD uses less reactive N 2 gas as the nitrogen source, which makes it suitable for the epitaxial growth of nitride semiconductors on substrates vulnerable to chemical attacks.…”

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confidence: 99%

Structural Properties of Group III Nitrides Grown on SrTiO ₃ (111) Substrates by Pulsed Laser Deposition

Ohta

Fujioka

Kawano

et al. 2002

phys. stat. sol. (c)

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. Hg; 81.15.Fg We have grown group III nitrides on SrTiO 3 (STO) substrates using pulsed laser deposition (PLD) and investigated their structural properties by high resolution X-ray diffraction (HRXRD) and reflection high energy electron diffraction (RHEED). We have found that AlN and GaN grow epitaxially on STO (111) substrates. The epitaxial relationship between the nitrides and SrTiO 3 substrates is nitrides(0001) || SrTiO 3 (111) and nitrides[10--10] || SrTiO 3 [11--2]. The in-plane alignment is rotated by 30 along the c-axis from that expected by the notion of lattice matching. It has also been found that AlN grown on SrTiO 3 is dilated by 0.4% in the [0001] direction due to the lattice mismatch and the smaller thermal contraction rate.

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“…For further improvement in the crystal quality of InN, it is desirable to develop a new growth technique that provides a large migration length for the precursors on the surface at this low temperature. Pulsed laser deposition (PLD) is a promising candidate for this purpose, because it imparts high kinetic energies, especially to the group III atoms, when they impinge on the surface [6][7][8][9][10][11][12][13][14][15]. In fact, we have demonstrated the successful epitaxial growth of AlN and GaN, even at room temperature [16][17][18].…”

Section: Introductionmentioning

confidence: 96%