2017
DOI: 10.4103/1450-1147.203079
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Cadmium telluride semiconductor detector for improved spatial and energy resolution radioisotopic imaging

Abstract: The detector in single-photon emission computed tomography has played a key role in the quality of the images. Over the past few decades, developments in semiconductor detector technology provided an appropriate substitution for scintillation detectors in terms of high sensitivity, better energy resolution, and also high spatial resolution. One of the considered detectors is cadmium telluride (CdTe). The purpose of this paper is to review the CdTe semiconductor detector used in preclinical studies, small organ… Show more

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Cited by 53 publications
(18 citation statements)
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References 55 publications
(201 reference statements)
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“…Our industrial collaborator DECTRIS (Baden-Dättwil, Switzerland) provided us with a 2D gamma detector prototype with a native resolution of 487×195 pixels and a pixel size of 172 μ m×172 μ m. The detector technology of DECTRIS is based on Hybrid Photon Counting (HPC) and cadmium telluride (CdTe) sensor material [12]. Its quantum efficiency (QE) at 140.5 keV is 31% [13]. A high QE is crucial as only ≈ 1% or less of the injected tracer activity arrives in the lymphatics.…”
Section: Methodsmentioning
confidence: 99%
“…Our industrial collaborator DECTRIS (Baden-Dättwil, Switzerland) provided us with a 2D gamma detector prototype with a native resolution of 487×195 pixels and a pixel size of 172 μ m×172 μ m. The detector technology of DECTRIS is based on Hybrid Photon Counting (HPC) and cadmium telluride (CdTe) sensor material [12]. Its quantum efficiency (QE) at 140.5 keV is 31% [13]. A high QE is crucial as only ≈ 1% or less of the injected tracer activity arrives in the lymphatics.…”
Section: Methodsmentioning
confidence: 99%
“…The energy of the photon is directly proportional to the total induced charge on each electrode. Semiconductor detectors have higher energy resolution due to this direct conversion when compared to scintillation detectors [46,47]. The mobility-lifetime products for electrons and holes, µτ e and µτ h , of the semiconductor are very important, as they dictate the mean drift length which is the average distance a charge carrier can travel before being captured by traps or recombination centers.…”
Section: Semiconductor Detectorsmentioning
confidence: 99%
“…In the literature, there are several studies on the use of the CdTe detector [9][10][11][12] and registration by it of high-intensity gamma-radiation in the range of energies of 0.06-1.2 MeV. In papers [12][13][14][15], CdTe detectors are studied together with operational characteristics, temperature stability, and reliability of the detector's measurements.…”
Section: Literature Review and Problem Statementmentioning
confidence: 99%
“…Analysis of the data published in [4][5][6][7][8][9][10][11][12][13][14][15], makes it possible to establish the following. In the studied sources, little attention was paid to the problems of assessment of the accuracy of the proposed methods.…”
Section: Literature Review and Problem Statementmentioning
confidence: 99%