Cadmium Telluride (CdTe) Thin Film for Photovoltaic Applications

Ray, Sekhar C.; Mallick, Kaushik

doi:10.7763/ijcea.2013.v4.290

Cited by 9 publications

(1 citation statement)

References 25 publications

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“…Cadmiun telluride (CdTe) films are suitable for application in optoelectronic devices such as solar cells and x-ray detectors due to its excellent optical and electrical properties [1][2][3][4][5]. One of the main characteristics of CdTe is that a layer of a few micrometers of thickness can absorb 90% of incident photons, because it has an optical bandgap of 1.5 eV and high absorption coefficient (>5×10 5 cm −1 ) [6].…”

Section: Introductionmentioning

confidence: 99%

CdTe:Sn thin films deposited by the simultaneous laser ablation of CdTe and Sn targets

Rivera

García

Cardona

et al. 2020

Mater. Res. Express

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CdTe:Sn thin films were grown by pulsed laser deposition on glass substrates at room temperature. The study of the changes in the chemical, structural and optical properties of the films as a function of the density of Sn ions calculated from Langmuir planar probe measurments is presented. Four films were grown by the simultaneous ablation of CdTe and Sn targets in vacuum. The Sn ion density was modified by varying the fluence on the Sn target, while the CdTe plasma density was kept constant for all the deposits. One CdTe film was grown as control sample using the same experimental conditions as in the CdTe:Sn films. The chemical composition was analyzed by XPS, where a dependence of the Sn incorporation into the CdTe lattice, on the Sn ion plasma density was demonstrated. The crystalline structure analysis by XRD showed a hexagonal structure for all the films. When the CdTe and Sn plasmas were combined, a preferential orientation in the plane (110) was observed for the resulting films. Furthermore, as Sn plasma density increased, the intensity of the (110) peak increased as well, suggesting that crystalline re-orientation is an effect of Sn incorporated into the CdTe lattice. Vibrational behavior was analyzed by Raman spectroscopy. A vibrational mode appeared at 118 cm −1 and was related to a Sn-Te vibration, suggesting the incorporation of substitutional Sn into the CdTe lattice. The Sn-Te bonding was confirmed by XPS by the appearance of signals centered at 485 and 494 eV, which correspond to Sn 2+ in SnTe. Thin films thicknesses values were between 320 and 460 nm increasing with Sn ion density. The band gap calculated using UV-vis spectrophotometry, resulted in values ranging from 1.42 to 1.46 eV. PL measurements showed a slight blue shift of the near-edge emission as Sn plasma density increased.

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