Cadmium sulfide surface stabilization for InP-based optoelectronic devices

Cadmium sulfide passivation of InGaAs/InP mesa p-i-n photodiodes

“…The inclusion of this final chemical treatment and anneal was found to produce more uniform electrical results in this and other works. [10][11][12][13][14] A similar recipe to the one presented here produced dramatic reductions in interface state trap density on InP based MIS structures as measured by high and low frequency CV techniques. [10][11][12][13] Sample D was prepared in an identical fashion to sample C with the addition of a 2000 Å SiO 2 capping layer deposited by lowtemperature CVD.…”

“…Another promising technique, sulfur passivation using chemical baths, was shown to be particularly effective in reducing surface states in III-V compounds in a variety of device types. [10][11][12][13][14] Although the use of (NH 4 ) 2 S and (NH 4 ) 2 S x chemical baths are cited most frequently in the literature, chemically deposited cadmium sulfide (CdS) has also been shown to improve device performance through the reduction of interface states in InP MIS diodes, 10 MIS capacitors, [11][12][13][14] MSM devices, 10 MISFETs, 13 Schottky contacts, 14 and HEMTs. 10 In this report, we present the results of applying the chemical bath deposition (CBD) CdS process of Ref.…”

Effect of emitter layer concentration on the performance of GaAs p/sup +/-i homojunction far-infrared detectors: a comparison of theory and experiment

“…Defects have been found to be the source of tunneling currents in HgCdTe detectors [15], and the elimination of these imperfections is a significant material challenge yet to be overcome, and the defect induced current has also been found in advanced MBE technology for GaAs/AlGaAs QWIP's [11], [16]. Recently, a successful approach reported in the literature described reduction of the dark current density due to the surface or interface defects by using thin films to passivate the detector surface [17], this also seems to be necessary for HIWIP detectors, especially for the highly doped emitter layer cases.…”

Open Photoacoustic Cell Configuration Applied to the Thermal Characterization of Liquid CdS Nanocomposites

“…The thermal properties of semiconductors have been subjects of great study for characterizing processes in manufacturing of microelectronic devices [3]. Considering the application of semiconductor nanoparticles in various devices such as solar cells [4], transistors [5], and gas sensors [6], the evaluation of the thermal effusivity is of great practical significance. CdS is one of the most important II-VI semiconductors and possesses unique properties for applications in the fields of solar energy harvesting and biological sensors as examples, and have been studied widely [7][8][9][10].…”