CAD tools for micromechanics

Abstract

This paper describes the state of the art as well as demands and a concept for CAD tools supporting fast prototyping of microelectromechanical systems (MEMS). Based on commercial tools available in several engineering sciences, a more general simulator has to be developed. In future simulation tools, a general manager has to consider an interactive communication on different levels.

3D visualization tool for excimer laser micromachining

“…Because microstructures are built up in a layer form, simple stand-alone 2D CAD tools have been used to design masks and microstructures. Early CAD tools used for design of MEMS focused on simulation of the output characteristics of sensors for mechanical, thermal or magnetic devices [11]. Current MEMS CAD tools have broader capabilities and are integrated, providing design, simulation, and fabrication features.…”

Microsystem Modeling

“…( [6][7][8][9][10][11][12] where x the unitless dielectric susceptibility tensor, and AO = 8.85 x 10~1 2 As/Vm is the scalar dielectric permittivity of free space. To isolate the material property, we define the relative dielectric permittivity tensor K r to be A' -,-= A,-, / A° = Sy + %y .…”

“…To account for the temperature dependence, a linear model We only consider the drift current here, an assumption only valid for homogeneously doped semiconductor regions with no junction effects. In the presence of a static or slowly varying magnetic field induction vector field B (in tesla, Vs/m 2 ), the drift current transport is modulated as (6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16) where i, j, k, l, r, s, t = 1,..., 3, e is the Levi-Cevita permutation tensor, fi' = rp is the Hall mobility and r the Hall scattering factor. In the presence of a static or slowly varying magnetic field induction vector field B (in tesla, Vs/m 2 ), the drift current transport is modulated as (6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16) where i, j, k, l, r, s, t = 1,..., 3, e is the Levi-Cevita permutation tensor, fi' = rp is the Hall mobility and r the Hall scattering factor.…”

“…• , 3 (6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16)(17)(18)(19)(20) where co is a fourth-rank tensor of unitless piezoresistive coefficients. 7.…”

“…An excellent cross-section of the current state-of-the-art in microsystem modelling is the collection of 11 articles in a 'Special Issue on Modeling of Sensors and Materials' [6]. References [8][9][10] are application-oriented, and discuss the simulation of various microsystems (some address packaging and multi-chip modules, see [7,8,10]) with available computer programs. References [8][9][10] are application-oriented, and discuss the simulation of various microsystems (some address packaging and multi-chip modules, see [7,8,10]) with available computer programs.…”