Reactions of indium and silicon with lithium nitride in Ca/Li flux produce two new nitridosilicates: CaInSiN (orthorhombic, Ibam; a = 12.904(1) Å, b = 9.688(1) Å, c = 10.899(1) Å, Z = 4) and CaSiNH (monoclinic, C2/c; a = 5.236(1) Å, b = 10.461(3) Å, c = 16.389(4) Å, β = 91.182(4)°, Z = 8). CaInSiN features isolated [SiN] units and indium dimers surrounded by calcium atoms. CaSiNH features infinite chains of corner-sharing SiN tetrahedra and distorted edge-sharing H@Ca octahedra. Optical properties and band structure calculations indicate that CaInSiN is a void metal with calcium and indium states at the Fermi level and CaSiNH is a semiconductor with a band gap of 3.1 eV.