C-V characteristics of piezotronic metal-insulator-semiconductor transistor

Zheng, Jiayang; Zhou, Yongli; Zhang, Yaming; Li, Lijie; Zhang, Yan

doi:10.1016/j.scib.2019.11.001

Cited by 9 publications

(4 citation statements)

References 49 publications

(58 reference statements)

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“…While P OOP is down, the GF of the PM-FEST device reaches a maximum of 6.8 × 10 3 under compression, and 1.1 × 10 4 under tension. Compared with devices based on piezoelectric semiconductor materials, [5,7,18,[35][36][37][38][39][40][41][42][43][44][45][46][47] our device presents with an outstanding high GF (Figure 3e, Tables S1 and S2, Supporting Information) and these results indicate the advantages of ferroelectric semiconductor 𝛼-In 2 Se 3 with a large piezoelectric coefficient for piezotronic devices.…”

Section: Resultsmentioning

confidence: 93%

A Piezotronic and Magnetic Dual‐Gated Ferroelectric Semiconductor Transistor

Chi,

Zhao,

Zhang

et al. 2023

Adv Funct Materials

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Piezotronics is the coupling effect of the piezoelectric and semiconductor properties; however, the piezoelectric constant of the piezoelectric semiconductor is relatively small while the ferroelectric materials with large piezoelectric constant typically possess weak semiconductor properties, thus limiting the effective coupling coefficient of the piezotronic materials and devices. Here, a piezotronics and magnetic dual‐gated ferroelectric semiconductor transistor (PM‐FEST) is fabricated by Terfenol‐D, aluminum oxide (Al2O3), and ferroelectric semiconductor α‐In2Se3, which has a large piezoelectric coefficient, room‐temperature ferroelectricity, and dipole locking. The charge carrier transport and corresponding drain current of the PM‐FEST can be directly modulated by either the applied magnetic field or external strain. At a low magnetic field (<200 mT), the maximum current on/off ratio of α‐In2Se3 based PM‐FEST is as high as 1700%. Compared with traditional piezotronic devices, the PM‐FEST demonstrates a higher gauge factor (2.3 × 104) than that of the piezoelectric semiconductors. This work provides a possibility of realizing magnetism‐modulated electronics in semiconductors by exploiting the coupling of piezotronics and magnetostriction.

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Section: Resultsmentioning

confidence: 93%

A Piezotronic and Magnetic Dual‐Gated Ferroelectric Semiconductor Transistor

Chi,

Zhao,

Zhang

et al. 2023

Adv Funct Materials

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“…In contrast, the changes in capacitance, as shown in Figure c,d, exhibit a steady and consistent trend along with small variations in response to applied pressure in both the high-performance and low-power regimes. The impact of the piezocharges on the capacitance of the Schottky diode can be illustrated by eq C ( e 33 ) = A ε normalS W normald normale normalp ‐ normale normalf normalf normale normalc normalt normali normalv normale ( e 33 ) where C (e 33 ) is the capacitance, A is the sample area, and W dep‑effective (e 33 ) is the effective depletion width, related to the piezocharges by eq , W dep ‐ effective ( e 33 ) = true[ 2 ε s ( V bi − q 2 ρ piezo W piezo 2 2 ε s + V bias ) q N d true] 1 / 2 where V bi is the built-in potential, V bias is the external bias voltage, and N d is the donor concentration. Hence, the changes of effective depletion width induced by piezocharges can be readily extracted from the pressure-dependent C – V curves based on eq normalΔ W dep ‐ effec …”

Section: Resultsmentioning

confidence: 99%

Ultra-Low-Power and Wide-Operating-Voltage-Window Capacitive Piezotronic Sensor through Coupling of Piezocharges and Depletion Widths for Tactile Sensing

Hsiao,

Jang,

Lin

et al. 2023

ACS Appl. Mater. Interfaces

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The rapid growth of Artificial Intelligence and Internet of Things (AIoT) demands the development of ultra-low-power devices for future advanced technology. In this study, we introduce a capacitive piezotronic sensor specifically designed for tactile sensing, which enables an ultra-low-voltage operation at nearly 0 reading bias conditions with a consistent response within a wide voltage range. This sensor directly detects capacitance changes induced by piezocharges, reflecting perturbation of the effective depletion width, and ensures ultralow power capability by eliminating the necessity of turning on the Schottky diode for the first time. The dynamic response of the sensor demonstrates ultralow power capability and immunity to triboelectric interference, making it particularly suitable for tactile sensing applications in robotics, prosthetics, and wearables. This study provides valuable insights and design guidelines for future ultra-low-power thin-film-based capacitive piezotronic/piezophototronic devices for tactile sensing.

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“…Jin et al advanced their work to the small-signal dynamic characterization of the piezotronic effect by studying the diffusion capacitance and conductivity of piezoelectric p-n junctions under external compressive stress at low and high frequencies [ 65 ]. Furthermore, the researchers also simulated the piezotronic effects in more complex devices, such as FET [ 66 ], MIS devices [ 67 ], and BJT [ 68 ].…”

Section: Piezotronics Based On Zno Nanowiresmentioning

confidence: 99%

Fundamentals and Applications of ZnO-Nanowire-Based Piezotronics and Piezo-Phototronics

et al. 2022

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The piezotronic effect is a coupling effect of semiconductor and piezoelectric properties. The piezoelectric potential is used to adjust the p-n junction barrier width and Schottky barrier height to control carrier transportation. At present, it has been applied in the fields of sensors, human–machine interaction, and active flexible electronic devices. The piezo-phototronic effect is a three-field coupling effect of semiconductor, photoexcitation, and piezoelectric properties. The piezoelectric potential generated by the applied strain in the piezoelectric semiconductor controls the generation, transport, separation, and recombination of carriers at the metal–semiconductor contact or p-n junction interface, thereby improving optoelectronic devices performance, such as photodetectors, solar cells, and light-emitting diodes (LED). Since then, the piezotronics and piezo-phototronic effects have attracted vast research interest due to their ability to remarkably enhance the performance of electronic and optoelectronic devices. Meanwhile, ZnO has become an ideal material for studying the piezotronic and piezo-phototronic effects due to its simple preparation process and better biocompatibility. In this review, first, the preparation methods and structural characteristics of ZnO nanowires (NWs) with different doping types were summarized. Then, the theoretical basis of the piezotronic effect and its application in the fields of sensors, biochemistry, energy harvesting, and logic operations (based on piezoelectric transistors) were reviewed. Next, the piezo-phototronic effect in the performance of photodetectors, solar cells, and LEDs was also summarized and analyzed. In addition, modulation of the piezotronic and piezo-phototronic effects was compared and summarized for different materials, structural designs, performance characteristics, and working mechanisms’ analysis. This comprehensive review provides fundamental theoretical and applied guidance for future research directions in piezotronics and piezo-phototronics for optoelectronic devices and energy harvesting.

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C-V characteristics of piezotronic metal-insulator-semiconductor transistor

Cited by 9 publications

References 49 publications

A Piezotronic and Magnetic Dual‐Gated Ferroelectric Semiconductor Transistor

A Piezotronic and Magnetic Dual‐Gated Ferroelectric Semiconductor Transistor

Ultra-Low-Power and Wide-Operating-Voltage-Window Capacitive Piezotronic Sensor through Coupling of Piezocharges and Depletion Widths for Tactile Sensing

Fundamentals and Applications of ZnO-Nanowire-Based Piezotronics and Piezo-Phototronics

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