C-Band Single-Chip Radar Front-End in AlGaN/GaN Technology

Heijningen, M. van; Hek, Peter de; Dourlens, C.; Fellon, P.; Adamiuk, Grzegorz; Ayllon, Natanael; Vliet, Frank van

doi:10.1109/tmtt.2017.2688438

Cited by 38 publications

(10 citation statements)

References 14 publications

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“…The Tx-performance is directly related by R ON values and, therefore, by devices total area. According to 22 , an 8 3 200 mm gate periphery was used for all (both series and shunt) devices in the switch. The layout of the designed SPDT is shown in Figure 4.…”

Section: P Rop Os Ed a Rchi Te Ctu Re Des I Gnmentioning

confidence: 99%

High power‐handling SPDT switch in 0.25‐µm GaN technology

Polli

Palomba

Colangeli

et al. 2018

Int J RF Microw Comput Aided Eng

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An asymmetrical switch architecture suitable for transmit/receive modules is proposed in this contribution. The design procedure and the comparison between simulations and measurements of a test circuit are provided. The switch handles an input power of 48.8 dBm at 0.1 dB power compression level and features a 31‐dB isolation together with an insertion loss less than 0.5 dB both in Rx‐ and Tx‐mode.

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Section: P Rop Os Ed a Rchi Te Ctu Re Des I Gnmentioning

confidence: 99%

High power‐handling SPDT switch in 0.25‐µm GaN technology

Polli

Palomba

Colangeli

et al. 2018

Int J RF Microw Comput Aided Eng

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“…Secondly, the high power handling capability also offers a great potential for good linearity performance required for MIMO communications, thereby reducing the intermodulation of unwanted signals and increasing the immunity to the jamming signals [13]. Lastly, as GaN-based PAs have become one of the best candidates for microwave high power application, monolithically RF front-end integrating LNA and PA on a single chip contributes to lower package loss and cost [14,15]. Because of the advantages of low cost and high integration, some literatures have presented the application of CMOS process in radar [16,17].…”

Section: Introductionmentioning

confidence: 99%

A K-band MMIC low noise amplifier in GaN-on-Si 100-nm technology for MIMO radar receivers

Yang

Zhang

Liu

et al. 2022

IEICE Electron. Express

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A K-band low noise amplifier (LNA) with low and flat noise figure (NF) is proposed in this letter. The LNA is designed as the first stage of an RF receiver in a frequency modulated continuous wave (FMCW) multiple-in multiple-out (MIMO) radar system for marine vessel monitoring and airspace unmanned aerial vehicle (UAV) monitoring. The multi-antenna structure at the receiving end of the MIMO radar implies higher sensitivity. The LNA is fabricated using a 100-nm GaN high electron mobility transistor (HEMT) process with a chip area of 2.2 mm 2 . By analyzing the noise equivalent circuit model of a GaN-on-Si HEMT and optimizing the matching network, the proposed LNA achieves a measured average gain of 17.2 dB, an NF of 2.0-2.3 dB over the frequency range from 18 to 22.5 GHz. With a power sweep measurement, this LNA achieves an P1dB of 10.5 dBm and an OIP3 of 19 dBm at 20 GHz. The DC consumption is 220 mW under 5 V power supply.

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“…Compared to the gallium arsenide (GaAs) and silicon (CMOS or LDMOS) PAs [ 1 , 2 , 3 , 4 ], GaN PAs exhibit higher output power, higher efficiency, wider bandwidth and better thermal characteristics. Therefore, GaN technology is a good candidate for realizing high performance HPAs [ 5 , 6 , 7 , 8 , 9 , 10 , 11 , 12 ].…”

Section: Introductionmentioning

confidence: 99%

A Wideband High-Efficiency GaN MMIC Power Amplifier for Sub-6-GHz Applications

Liao²,

Zhang³

et al. 2022

Micromachines

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The monolithic microwave integrated circuit (MMIC) power amplifiers serve an essential and critical role in RF transmit/receive (T/R) modules of phased array radar systems, mobile communication systems and satellite systems. Over recent years, there has been an increasing requirement to develop wideband high-efficiency MMIC high power amplifiers (HPAs) to accommodate wideband operation and reduce power consumption. This paper presents a wideband high efficiency MMIC HPA for Sub-6-GHz applications using a 0.25-μm gate-length D-mode GaN/SiC high electron mobility transistor (HEMT) process. The amplifier consists of two stages with two HEMT cells for the driver stage and eight HEMT cells for the power stage. To obtain a flat gain while maintaining the wideband characteristic, a gain equalization technique is employed in the inter-stage matching circuit. Meanwhile, a low-loss output matching network is utilized to ensure high efficiency. The fabricated HPA occupies a compact chip area of 14.35 mm2 including testing pads. Over the frequency range of 2–6 GHz, measured results of this HPA show a saturated continuous wave (CW) output power of 44.4–45.2 dBm, a power added efficiency (PAE) of 35.8–51.3%, a small signal gain of 24–25.5 dB, and maximum input and output return losses of 14.5 and 10 dB, respectively.

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C-Band Single-Chip Radar Front-End in AlGaN/GaN Technology

Cited by 38 publications

References 14 publications

High power‐handling SPDT switch in 0.25‐µm GaN technology

High power‐handling SPDT switch in 0.25‐µm GaN technology

A K-band MMIC low noise amplifier in GaN-on-Si 100-nm technology for MIMO radar receivers

A Wideband High-Efficiency GaN MMIC Power Amplifier for Sub-6-GHz Applications

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