C. - AMORPHOUS METALLIC SYSTEMS.TEMPERATURE DEPENDENCE OF THE ELECTRICAL RESISTIVITY OF AMORPHOUS Ge, Sn AND Bi ALLOYS AND ITS RELATION TO SUPERCONDUCTIVITY

Abstract

The amorphous alloys are quench-condensed from the vapour phase on a substrate at 4 K. The electrical resistivity of amorphous Ge + 41 at. % Au, Bi + 15 at. % Ag and Sn + x at. % Cu (x = 10 to 80) is measured. An unusual linear temperature dependence is found with negative dope for Ge, Bi and Sn alloys and with a positive slope for Sn alloys with Cu concentration less than 60 at. %. The temperature dependent part of the electrical resistivity is explained with conduction electrons being scattered by p-electrons. The superconducting transition temperature of amorphous Sn alloys is found to be proportional to the positive slope of the normal state resistivity

Transport properties and atomic structure of ion-beam-deposited W, Pd and Pt nanostructures

“…For Pt and Pd structures the fits indicate that two scattering processes influence the resistivity. The quasi-linear term −bT α might have the same origin as that observed for Ge, Sn and Bi amorphous alloys [24] and interpreted in terms of the scattering of electrons coming from two different bands and with different effective masses [25].…”

“…with the exponents α = 0.8 ± 0.1 and β = 0.8, 0.3, 0 for Pd, Pt and W structures, respectively, and ρ 0 a constant resistivity value. The absence of the +cT −β contribution for the W structures might be due to the overwhelming influence of superconductivity, as observed in amorphous Ge, Sn and Bi alloys [24]. For Pt and Pd structures the fits indicate that two scattering processes influence the resistivity.…”