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doi:10.4028/www.scientific.net/msf.740-742

Cited by 6 publications

(1 citation statement)

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“…However, the JFET effect and the Zener breakdown between the inner PN junctions of the SJ may cause a strong characteristic degradation if W is lower than 0.5 μm. The SJ concept can also be applied to the devices based on other semiconductor materials, such as the SiC [81,82] and the GaN [83,84] . The optimization theory of the SJ based on the silicon is universal for other materials, in which the differences of the impact ionized rate (band gap), the mobility and the dielectric constant should be considered.…”

Section: Conclusion and Prospectmentioning

confidence: 99%

Concept and design of super junction devices

Zhang

Qiao

et al. 2018

J. Semicond.

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The super junction (SJ) has been recognized as the " milestone” of the power MOSFET, which is the most important innovation concept of the voltage-sustaining layer (VSL). The basic structure of the SJ is a typical junction-type VSL (J-VSL) with the periodic N and P regions. However, the conventional VSL is a typical resistance-type VSL (R-VSL) with only an N or P region. It is a qualitative change of the VSL from the R-VSL to the J-VSL, introducing the bulk depletion to increase the doping concentration and optimize the bulk electric field of the SJ. This paper firstly summarizes the development of the SJ, and then the optimization theory of the SJ is discussed for both the vertical and the lateral devices, including the non-full depletion mode, the minimum specific on-resistance optimization method and the equivalent substrate model. The SJ concept breaks the conventional " silicon limit” relationship of Ron∝VB2.5, showing a quasi-linear relationship of Ron∝VB1.03.

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Section: Conclusion and Prospectmentioning

confidence: 99%

Concept and design of super junction devices

Zhang

Qiao

et al. 2018

J. Semicond.

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Investigation of V-shaped extended defects in a 4H–SiC epitaxial film

Tochigi

Matsuhata

Yamaguchi

et al. 2017

Philosophical Magazine

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Temperature-Dependent Stability of Polytypes and Stacking Faults inSiC: Reconciling Theory and Experiments

et al. 2019

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The relative stability of SiC polytypes, changing with temperature, has been considered a paradox for about thirty years, due to discrepancies between theory and experiments. Based on ab-initio calculations including van der Waals corrections, a temperature-dependent polytypic diagram consistent with the experimental observations is obtained. Results are easily interpreted based on the influence of the hexagonality on both cohesive energy and entropy. Temperature-dependent stability of stacking faults is also analyzed and found to be in agreement with experimental evidences. Our results suggest that lower temperatures during SiC crystal deposition are advantageous in order to reduce ubiquitous stacking faults in SiC-based power devices.

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Cited by 6 publications

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Concept and design of super junction devices

Concept and design of super junction devices

Investigation of V-shaped extended defects in a 4H–SiC epitaxial film

Temperature-Dependent Stability of Polytypes and Stacking Faults inSiC: Reconciling Theory and Experiments

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