Burst-mode transmitter for 1.25Gb/s Ethernet PON applications [passive optical networks]

Oh, Yong-Hun; Le, Quan; Lee, Sang‐Gug; Yen, Nguyen Duy Bien; Kang, Hee-Won; Yoo, Tae-Whan

doi:10.1109/esscir.2004.1356673

Cited by 4 publications

(2 citation statements)

References 3 publications

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“…The driver presented in [2] also demands at least 3.3 v supply. The demand for * Corresponding author.…”

Section: Introductionmentioning

confidence: 99%

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DC-Coupled Burst-Mode Laser Diode Driver with Automatic Power Control for 1.25Gbit/s PON System

Chen

2005

Analog Integr Circ Sig Process

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An integrated burst-mode laser diode driver is presented for PON application. The bias current range and modulation current range are 1-75 mA and 5-80 mA respectively. The DC-coupled interface between the driver and the laser diode can tolerate the output transient voltage as low as 0.6v. The novel digital APC loop can stabilize the output average optical power and extinction ratio respectively within ±0.3 dBm and ±0.4 dB (−40 to 100 • C) with less than 0.6 µs initialization time and infinite bias current and modulation current hold time. Moreover, the fast burst response is achieved with burst on/off time less than 5 ns. The chip is implemented in a TSMC 0.35-µm SiGe BiCMOS technology and occupies an area of 1.56 × 1.67 mm 2 with power consumption of 105 mW from a supply voltage of 2.5 v.

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“…The driver presented in [2] also demands at least 3.3 v supply. The demand for * Corresponding author.…”

Section: Introductionmentioning

confidence: 99%

“…The burst-mode upstream transmitter located in each subscriber ONU is one of the key building blocks of a PON system. Several 1.25 Gbit/s burst-mode laser diode drivers for GPON system or EPON system have been reported recently [1,2].…”

Section: Introductionmentioning

confidence: 99%

DC-Coupled Burst-Mode Laser Diode Driver with Automatic Power Control for 1.25Gbit/s PON System

Chen

2005

Analog Integr Circ Sig Process

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SDH/SONET Multi-rate SFP Module with Gain Selectable Transimpedance Amplifier and Extinction Ratio Control Circuit

Tanaka

Seki

Furudate

et al. 2007

2007 Proceedings 57th Electronic Components and Technology Conference

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A fully integrated CMOS burst-mode upstream transmitter for gigabit-class passive optical network applications

Oh¹,

Kang

Lim

et al. 2007

ESSCIRC 2007 - 33rd European Solid-State Circuits Conference

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A fully integrated burst-mode upstream transmitter chip for gigabit-class passive optical network applications is implemented in 0.18µm CMOS technology. In order to control consecutive burst data, the transmitter proposed in this paper uses a reset mechanism with TX_enable as a burst envelope signal. The feedback from the monitoring photodiode (MPD) is separated by two independent paths for temperature compensation. The chip tested with chip-on-board configuration shows an average power of 2dBm with extinction ratio of above 12dB under 1.25Gb/s burstmode operation. Based on the measurement, this work complies with the GPON ITU-T Recommendation G.984.2.

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Burst-mode transmitter for 1.25Gb/s Ethernet PON applications [passive optical networks]

Cited by 4 publications

References 3 publications

DC-Coupled Burst-Mode Laser Diode Driver with Automatic Power Control for 1.25Gbit/s PON System

DC-Coupled Burst-Mode Laser Diode Driver with Automatic Power Control for 1.25Gbit/s PON System

SDH/SONET Multi-rate SFP Module with Gain Selectable Transimpedance Amplifier and Extinction Ratio Control Circuit

A fully integrated CMOS burst-mode upstream transmitter for gigabit-class passive optical network applications

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