Bunch by bunch beam monitoring in 3<sup>rd</sup>and 4<sup>th</sup>generation light sources by means of single crystal diamond detectors and quantum well devices

Antonelli, M.; Fraia, Michele Di; Tallaire, Alexandre; Achard, Jocelyn; Carrato, Sergio; Menk, R.H.; Cautero, G.; Giuressi, D.; Jark, W.; Biasiol, G.; Ganbold, Tamiraa; Oliver, K.; Callegari, Carlo; Coreno, Marcello; Sio, A. De; Pace, E.

doi:10.1117/12.929668

Cited by 6 publications

(5 citation statements)

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“…As shown previously the introduction of the QW [5,6] increased the collection efficiency of GaAs. Moreover, a charge multiplication mechanism in the QW area causing a controlled avalanche process has been observed once the external electrical field exceeds a certain threshold.…”

Section: Introductionsupporting

confidence: 66%

“…Many applications in the infrared region are reported in literature [3]. Recently, QW-based solutions for fast monitoring of FEL and synchrotron radiation in the ultraviolet (UV) and X-Ray regions have also been proposed [4][5][6]. The present work investigates the possibility of exploiting MBE-grown InGaAs/InAlAs QW structures for the production of fast, multi-wavelength sensors, since such objects show a number of features (e.g.…”

Section: Introductionmentioning

confidence: 99%

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Fast pixelated sensors for radiation detection and imaging based on quantum confined structures in III/V semiconductors

et al. 2017

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In order to improve the characterisation of the delivered beams in many types of photon sources, innovative beam profilers based on III/V semiconductor materials (InGaAs/InAlAs) have been deeply investigated. Owing to a tunable and direct band gap these devices allow radiation detection in a wide spectral range. In order to increase the sensitivity of the device in radiation detection charge amplification on the sensor level is implemented. This is obtained by exploiting In0.75Ga0.25As/In0.75Al0.25As quantum wells (QW) hosting a two-dimensional electron gas (2DEG) through molecular beam epitaxy (MBE). Internal charge-amplification mechanism can be achieved for very low applied voltages, while the high carrier mobility allows the design of very fast photon detectors with sub-nanosecond response times. This technology has been preliminarily exploited to fabricate prototype beam profilers with a strip geometry (with 50-μm-wide strips). Tests were carried out both with conventional X-ray tubes and at the Elettra synchrotron facility. The results testify how these profilers are capable of reconstructing the shape of the beam, as well as estimating the position of the beam centroid with a precision of about 400 nm. Further measurements with different samples of decreasing thickness have shown how this precision could be further improved by an optimised microfabrication. For this reason a new design, based on a membrane-photodetector, is proposed. Results regarding the spatial resolution as function of the sensor thickness will be presented and discussed.

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Section: Introductionsupporting

confidence: 66%

Section: Introductionmentioning

confidence: 99%

Fast pixelated sensors for radiation detection and imaging based on quantum confined structures in III/V semiconductors

et al. 2017

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“…Thanks to their direct, low-energy band gap and high electron mobility, quantum-well (QW) devices based on arsenide semiconductors have been proposed as multi-wavelength sensors from visible light to hard X-rays. Moreover, the possibility to use QW photon detectors in infrared [2], ultraviolet (UV) and X-ray regions [3,4] has been reported.…”

Section: Jinst 10 C03009mentioning

confidence: 99%

Fast, multi-wavelength, efficiency-enhanced pixelated devices based on InGaAs/InAlAs quantum-well

et al. 2015

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Several applications utilizing either synchrotron or conventional light sources require fast and efficient pixelated detectors. In order to cover a wide range of experiments, this work investigates the possibility to use InGaAs/InAlAs quantum well devices as photon detectors for a broad range of energies. Owing to their direct, low-energy band gap and high electron mobility, such devices may be used also at room temperature as multi-wavelength sensors from visible light to hard X-rays. Furthermore, internal charge-amplification mechanism can be applied for very low signal levels, while the high carrier mobility allows the design of very fast photon detectors with sub-nanosecond response times.Samples were grown by solid source molecular beam epitaxy on GaAs substrates. Metamorphic In0.75Ga0.25As/ In0.75Al0.25As heterostructures were obtained by relaxing the strain due to the lattice mismatch in the substrate by means of a composition-graded buffer layer. A two-dimensional electron gas forming in an In0.75Ga0.25As quantum well is sandwiched between In0.75Al0.25As barriers and is modulation-doped by a Si δ on its top. The samples have been pixelated by using standard photolithographic techniques. In order to fit commercially available readout chips, a pixelated sensor with pixel size of 172 × 172 μ m2 is currently under development. A small-scale version of the pixelated quantum well sensor has been preliminary tested with 100-fs-wide laser pulses and X-ray synchrotron radiation. The reported results indicate that these sensors respond with 100-ps rise-times to ultra-fast laser pulses. Synchrotron X-ray tests show how these devices exhibit high charge collection efficiencies, which can be imputed to the charge-multiplication effect of the 2D electron gas inside the well.

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“…The opportunity to use QW devices for photon detection has been intensively addressed in the past years; many applications in the infrared region are reported in literature [3]. Recently, QWbased solutions for fast, FEL and synchrotron radiation monitoring in ultraviolet (UV) and X-Ray regions have also been proposed [4,5]. The present work investigates the possibility of exploiting MBE-grown InGaAs/InAlAs QW structures for the production of fast, multi-wavelength sensors, since such objects show a number of features (e.g.…”

Section: Introductionmentioning

confidence: 99%

Fast pixelated quantum-well-based sensor for multi-wavelength photon detection

Antonelli¹,

Ganbold²,

Menk³

et al. 2014

J. Inst.

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Bunch by bunch beam monitoring in 3^rdand 4^thgeneration light sources by means of single crystal diamond detectors and quantum well devices

Cited by 6 publications

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Fast pixelated sensors for radiation detection and imaging based on quantum confined structures in III/V semiconductors

Fast pixelated sensors for radiation detection and imaging based on quantum confined structures in III/V semiconductors

Fast, multi-wavelength, efficiency-enhanced pixelated devices based on InGaAs/InAlAs quantum-well

Fast pixelated quantum-well-based sensor for multi-wavelength photon detection

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Bunch by bunch beam monitoring in 3rdand 4thgeneration light sources by means of single crystal diamond detectors and quantum well devices

Cited by 6 publications

References 0 publications

Fast pixelated sensors for radiation detection and imaging based on quantum confined structures in III/V semiconductors

Fast pixelated sensors for radiation detection and imaging based on quantum confined structures in III/V semiconductors

Fast, multi-wavelength, efficiency-enhanced pixelated devices based on InGaAs/InAlAs quantum-well

Fast pixelated quantum-well-based sensor for multi-wavelength photon detection

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Bunch by bunch beam monitoring in 3^rdand 4^thgeneration light sources by means of single crystal diamond detectors and quantum well devices