Bulk Photovoltaic Effect in 2D Materials for Solar‐Power Harvesting

Abstract

has been dominated by various singlejunction solar cells with a practical efficiency of up to 22%. To date, photovoltaic devices with high efficiency, long lifetime, compact size, and low cost as a highlighter key still require more attention. Current commercially available solar panels based on mono-crystalline silicon (c-Si) wafers for single-junction solar cells dominate the current PV market. So far, laboratory solar cells have been fabricated with an efficiency of nearly 26.3%. Even though the energy conversion efficiency reaches a maximum value of ≈33.5% for the upper theoretical energy conversion efficiency with a bandgap of 1.15 eV. [2,3] Since Russell Shoemaker Ohl's experiment over 80 years ago, the p-n junction has become an important part of modern electronics and optoelectronics. [4] This device is constructed by connecting two types of dopants, n-type and p-type, together. [5,6] As a result, an intrinsic electric field is present at the interface, which could be employed by electron-hole pair separation created by the absorption of incoming photons. The photovoltaic (PV) effect is the phenomenon of voltage and current generation in materials while they are illuminated. Non-centrosymmetric materials are made up of only a single component. But a photocurrent is an electric current that can also be made when there is no built-in potential It is highly desirable for exploring and discovering new materials and outcome-based approaches to exceed the Shockley-Queisser limit for singlejunction photovoltaic cells. Low-dimensional piezoelectric materials have the potential to generate the optoelectronic phenomenon called the bulk photovoltaic effect, which is not limited by the theoretical limit for solar radiation into electricity conversion. The recent development of 2D materials has demonstrated that by using the bulk photovoltaic effect (BPVE) for crystals lacking inversion symmetry, it is possible to overcome this limit. So far, the exploration of p-n junction designs has been addressed in several review articles. However, the mechanism of BPVE differs from traditional p-n junctionbased photovoltaics in 2D materials. In this focused review, various concepts regarding the shift-current response are explored, both from theoretical and experimental points of view, which are generated in the framework of deformed 2D materials. Finally, prospective approaches for building BPVEbased next-generation solar cells using ultrathin 2D materials are presented. These materials are expected to work better than current methods of turning energy into electricity.

Strain‐Enhanced Photovoltaic Effect in MoTe2

“…[44] g) A photovoltaic mechanism at the p-n diode interface is demonstrated by a schematic illustration of the photovoltaic effect with I-V output characteristics. [44] h) A diagram illustrating the bulk photovoltaic effect (BPVE) effect with typical I-V output characteristics shows the BPVE mechanism in the absence of built-in potential. [44] range of phase transitions have been explored in TMDs through chemical modifications.…”

“…[44] h) A diagram illustrating the bulk photovoltaic effect (BPVE) effect with typical I-V output characteristics shows the BPVE mechanism in the absence of built-in potential. [44] range of phase transitions have been explored in TMDs through chemical modifications. [34,35] The elemental analysis of the 1T′-MoTe 2 nanoflake, as well as any changes in the crystal structure that could be determined from the interpretation of XPS spectra, were evaluated using the X-ray photoelectron spectroscopy (XPS) measuring technique, as shown in Figure 3f, which reveals the shift in binding energy.…”

“…e) I ds -V ds properties in the dark and with laser illumination. f) Photoconductive effect schematic illustration with I-V output characteristics demonstrating the photoconductive effect [44]. g) A photovoltaic mechanism at the p-n diode interface is demonstrated by a schematic illustration of the photovoltaic effect with I-V output characteristics [44].…”

Trends in energy and charge transfer in 2D and integrated perovskite heterostructures

“…It might be possible to create optoelectronic devices that are more efficient by managing the symmetry of a vdW interface. The bulk photovoltaic effect for solar-power harvesting 115 should be fairly simple to realize in perovskite oxides. The performance and durability in a variety of applications are limited by the chemical instability of perovskite oxide surfaces that are caused by cation segregation and phase precipitation.…”

Emerging trends in 2D TMDs with a broken gap interface

“…2,[6][7][8][9][10] However, the majority of Esaki diodes were made with Si-Ge and III-V semiconductors at this level of study. 6,7,[11][12][13][14][15][16] The threading dislocations, which are typically characterized by a lattice mismatch that occurred during the film development, led to the formation of grains at the junction interface. This limits the formation of different types of heterojunctions, such as types I, II, and III.…”