Bulk molybdenum field emitters by inductively coupled plasma etching

Zhu, Ning; Cole, Matthew T.; Milne, W. I.; Chen, Jing

doi:10.1039/c6cp06340c

Cited by 8 publications

(4 citation statements)

References 28 publications

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“…For brevity, as shown in Figure 5 a, a double-side-polished, 400 mm thick, 4-inch high purity (99.95%) Mo wafer was first coated with an evaporated 500 nm thick Al film to form etch mask. The tip array was subsequently patterned by photolithography ( Figure 5 b,c), with the Al patterned by dry etching in CH 3 F plasma ( Figure 5 d) [ 36 ]. The Mo tip array was etched using an anisotropic SF 6 dry etch in a commercial ICP etcher (Sentech PTSA 500, SENTECH Instruments GmbH, Berlin, Germany) ( Figure 5 e).…”

Section: Fabrication Processes and Morphology Propertiesmentioning

confidence: 99%

A Graphene-Coated Mo Tip Array for Highly-Efficient Nanostructured Electron Field Emitters

et al. 2017

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An efficient electron field emitter based on a monolayer graphene coated well aligned Mo tip array has been designed, fabricated, and evaluated. The advantages of this hybrid nanostructure film morphology are explored and discussed. Efficient and stable field emissions with low turn-on fields have been observed with the new devices. It is further found that the combination of graphene and Mo tip array leads to significant improvements in efficiency for the nanoscale heterostructure emitters.

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Section: Fabrication Processes and Morphology Propertiesmentioning

confidence: 99%

A Graphene-Coated Mo Tip Array for Highly-Efficient Nanostructured Electron Field Emitters

et al. 2017

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“…The FEA after photoresist stripping is shown in Figure 3 e. The surface was flat with no noticeable residues. The Mo FEA tips were etched by SF 6 /Ar dry etching as shown in Figure 3 f and Figure 4 b. Optimized ICP etcher process conditions, such as pressure, plasma power and gas flows, are reported elsewhere [ 26 ]. In the last process step as shown in Figure 3 g and Figure 4 c, ultrasonic agitation of 15 W was used to remove the sacrificial SiO 2 /Al stack.…”

Section: Fabrication Processesmentioning

confidence: 99%

Design, Fabrication and Characterization of Molybdenum Field Emitter Arrays (Mo-FEAs)

Zhu

Chen

2017

Micromachines

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We report on the fabrication of highly uniform field emitter arrays (FEAs) with an integrated self-aligned extraction gate from bulk molybdenum. All critical dimensions of the emitter tip were determined by a single process step of Inductively Coupled Plasma (ICP) etching. In addition, the height difference between the emitter tip and the gate plane was controlled by the thickness of the SiO2 dielectric layer. A 10 µm gate aperture molybdenum-FEAs (Mo-FEAs) at a typical 20 µm pitch with 6 µm height was achieved with 8.4 mA/cm2 current density at gate voltages of 110 V and the turn-on field of 1.4 V/µm. These self-aligned Mo-FEAs could be expanded to active larger areas to increase the emission current.

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“…Inspired by the deep etching process of silicon, efforts have been made in our previous work. Similar to molybdenum-based field emission arrays, fluoric ICP was employed to etch bulk tungsten [ 48 , 49 , 50 ]. Micro-needle arrays were initially achieved by isotropic etching, and high-aspect-ratio microstructures were micromachined by a mixed reactive plasma of SF 6 and C 4 F 8 [ 51 , 52 , 53 ].…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Bulk Tungsten Microstructure Arrays for Hydrophobic Metallic Surfaces Using Inductively Coupled Plasma Deep Etching

Wang,

Xia,

Song

et al. 2024

Micromachines

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Hydrophobic surfaces have attracted great attention due to their ability to repel water, and metallic surfaces are particularly significant as they have several benefits, for example they self-clean and do not corrode in marine environments, but also have several applications in the aircraft, building and automobile industries. Tungsten is an ideal material for metallic surfaces due to its remarkable mechanical properties. However, conventional micromachining methods of micro- or nanostructures, including mechanical fabrication and laser and wet etching are incapable of balancing functionality, consistency and cost. Inspired by the etching process of silicon, deep etching of bulk tungsten has been developed to achieve versatile microstructures with the advantages of high efficiency, large scale and low cost. In this article, fabrication methods of tungsten-based hydrophobic surfaces using an ICP deep etching process were proposed. Micro- or hierarchical structure arrays with controllable sidewall profiles were fabricated by optimizing etching parameters, which then exhibited hydrophobicity with contact angles of up to 131.8°.

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Bulk molybdenum field emitters by inductively coupled plasma etching

Cited by 8 publications

References 28 publications

A Graphene-Coated Mo Tip Array for Highly-Efficient Nanostructured Electron Field Emitters

A Graphene-Coated Mo Tip Array for Highly-Efficient Nanostructured Electron Field Emitters

Design, Fabrication and Characterization of Molybdenum Field Emitter Arrays (Mo-FEAs)

Fabrication of Bulk Tungsten Microstructure Arrays for Hydrophobic Metallic Surfaces Using Inductively Coupled Plasma Deep Etching

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