Bulk Growth of SiC – Review on Advances of SiC Vapor Growth for Improved Doping and Systematic Study on Dislocation Evolution

Sakwe, Sakwe Aloysius; Stockmeier, Matthias; Hens, Philip; Müller, Ralf; Queren, Desirée; Künecke, Ulrike; Konias, Katja; Hock, Rainer; Magerl, A.; Pons, M.; Winnacker, A.; Wellmann, Peter J.

doi:10.1002/9783527629053.ch1

Cited by 5 publications

(4 citation statements)

References 59 publications

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“…The surface of the bottom of the crystal is slightly convex. The order of the BPD density at the bottom of the crystal is 10 4 cm –2 , and it shows 6-fold symmetry on the basal plane, which is consistent with the experimental data …”

Section: Numerical Resultsmentioning

confidence: 99%

Three-Dimensional Modeling of Basal Plane Dislocations in 4H-SiC Single Crystals Grown by the Physical Vapor Transport Method

Gao

Kakimoto

2014

Crystal Growth & Design

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To effectively reduce basal plane dislocations (BPDs) during SiC physical vapor transport growth, a three-dimensional model for tracking the multiplication of BPDs has been developed. The distribution of BPDs inside global crystals has been shown. The effects of the convexity of the growth surface and the cooling rate have been analyzed. The results show that the convexity of the growth surface is unfavorable and can cause a large multiplication of BPDs when the crystal grows. Fast cooling during the cooling process is beneficial for the reduction of BPDs because fast cooling can result in a smaller radial flux at the high-temperature region. In addition, fast cooling can reduce the generation of stacking faults during the cooling process. Therefore, to reduce BPDs and stacking faults, it is better to maintain or reduce the convexity of the growth surface and increase the cooling rate during the cooling process.

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Section: Numerical Resultsmentioning

confidence: 99%

Three-Dimensional Modeling of Basal Plane Dislocations in 4H-SiC Single Crystals Grown by the Physical Vapor Transport Method

Gao

Kakimoto

2014

Crystal Growth & Design

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“…For the purpose of this chapter it is sufficient to provide an overview of the technology as it pertains to future biomedical devices, hence a simple discussion follows with sufficient references to fill in the details. For a review of how bulk hexagonal crystals of SiC are grown the reader is referred to several excellent references [1,8,9] where one can learn what is the state-of-the-art is and the key characteristics of these commercially available substrates. For biomedical devices to be cost-effective the most promising materials processing approach involves the synthesis of thin films.…”

Section: Silicon Carbide-materials Overviewmentioning

confidence: 99%

Silicon Carbide Materials for Biomedical Applications

Frewin

Coletti

et al. 2014

Carbon for Sensing Devices

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“…77 Furthermore, the densities of the 1-D (i.e., micropipe), two-dimensional (i.e., stacking fault), and three-dimensional 8 (i.e., polytype switch, carbon inclusion, and silicon droplet) defects in f-SiC have been drastically decreased to the negligible levels 6,9 by applying the FSGP method for the growth of f-SiC epilayers. Meanwhile, the source SiC material for FSGP is prepared via the modified physical vapor transport technique developed by Wellmann et al, 8,10,11 where the stable nitrogen doping and low dislocation densities in the source SiC material have been realized.…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence Quantum Yield of Fluorescent Silicon Carbide Determined by an Integrating Sphere Setup

Wei

2019

ACS Omega

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The excitation-dependent photoluminescence quantum yield (PL-QY) of strong n-type nitrogen–boron codoped 6H fluorescent silicon carbide (f-SiC) at room temperature is experimentally determined for the first time. The PL-QY measurements are realized by an integrating sphere system based on a classical two-measurement approach. In particular, in accordance to the difference between our in-lab setup and the standard setup of the two-measurement approach, we have technically modified the experimental design, the data processing algorithm, and the estimation of relative uncertainty. The measured highest PL-QY of f-SiC samples is found to reach above 30%. We compare the PL-QYs at a certain excitation power of all f-SiC samples by considering their intrinsic defect densities. Finally, the evolution of the excitation power-dependent PL-QY of f-SiC is attributed to both band-to-band and impurity-assisted Auger recombination.

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Bulk Growth of SiC – Review on Advances of SiC Vapor Growth for Improved Doping and Systematic Study on Dislocation Evolution

Cited by 5 publications

References 59 publications

Three-Dimensional Modeling of Basal Plane Dislocations in 4H-SiC Single Crystals Grown by the Physical Vapor Transport Method

Three-Dimensional Modeling of Basal Plane Dislocations in 4H-SiC Single Crystals Grown by the Physical Vapor Transport Method

Silicon Carbide Materials for Biomedical Applications

Photoluminescence Quantum Yield of Fluorescent Silicon Carbide Determined by an Integrating Sphere Setup

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