Bulk growth of GaAs An overview

Rudolph, P.; Jurisch, M.

doi:10.1016/s0022-0248(98)01208-1

Cited by 78 publications

(58 citation statements)

References 43 publications

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“…This finding completes and confirms previous experiments performed in Te-enriched CdTe 25 and in a van Doorn setup with controlled P Cd ϭ 1.3-1.6 atm. 16 The reported experimental data show that supercooling decreases with increasing contents of Cd both in Te-rich and Cd-rich melt.…”

Section: Resultssupporting

confidence: 92%

Differential thermal analysis of supercooling in CdTe

Turkevych

Franc

Grill

et al. 2004

Journal of Elec Materi

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The supercooling of the melt before the start of crystal growth depends on the previous overheating of the liquid, stoichiometry of the melt, and cooling rate. Differential thermal analysis (DTA) scanning experiments were performed for different cooling rates under constant Cd vapor pressures, which were varied from 1 atm to 5 atm. The maximum cooling rate was 1 K/min and the minimum was 0.05 K/min. It was found that the degree of supercooling systematically decreases with increasing of Cd vapor pressure and near 4-5 atm practically approaches zero. This complex behavior could be explained by a structural alteration in the state of the CdTe melt during stepwise changing of its stoichiometry from Te-to Cd-rich.

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Section: Resultssupporting

confidence: 92%

Differential thermal analysis of supercooling in CdTe

Turkevych

Franc

Grill

et al. 2004

Journal of Elec Materi

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“…1c [11,13,24,25,37,38]. The cells are of globular type [24] and their size decreases with increasing average dislocation density [35,37]. The observed mean cell diameters are 100 -200 µm for 4-6" LEC crystals with typical etch pit densities (EPD) of (0.7-2) x 10 5 cm -2 , 500 -1000 µm for 4" VCz crystals (EPD: ~10 4 cm -2…”

Section: Gaasmentioning

confidence: 99%

Dislocation cell structures in melt‐grown semiconductor compound crystals

Rudolph

2004

Cryst. Res. Technol.

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The phenomenon of dislocation patterning during melt growth of III-V, II-VI and IV-VI semiconductor crystals is discussed. The paper is focused on the formation of cellular structures driven by the growth inherent thermo-mechanical stress. Of particular interest is the scaling of relations between cells size, dislocation density and acting shear stress. Among the materials there are characteristic similarities but also significant variations of the cell genesis. After the related compound specifics are discussed possible measures for retardation of cell patterning during growth are demonstrated.

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“…The bulk single crystalline sample was prepared by the Bridgman method. 24 The linear transmission spectra of thin film samples between 350-850 nm were collected by Ocean Optics USB4000 spectrometer at 45 o incidence angle. The schematic of the SHG measurement is depicted in Fig.…”

Section: Introductionmentioning

confidence: 99%

Surface and bulk contributions to the second-harmonic generation in Bi2Se3

Shi

Yao

et al. 2016

Phys. Rev. B

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Second harmonic generation (SHG) from three-dimensional topological insulators originates from both surface and bulk, which does not allow probing of surface states unless the measurement can separate the two contributions. In this study, we used combined measurements of transmitted and reflected SHG from epitaxially grown Bi 2 Se 3 thin films of different thickness on BaF 2 , and a bulk Bi 2 Se 3 crystal, to deduce surface and bulk nonlinear susceptibilities of Bi 2 Se 3 separately. We found that the surface * E-mail: yrshen@berkeley.edu, wtliu@fudan.edu.cn 2 contribution to SHG was comparable to that from the bulk of the crystal, but becomes dominant in ultrathin films. In the latter case, contributions from both air/Bi 2 Se 3 and Bi 2 Se 3 /BaF 2 interfaces were significant, and exhibited a strong out-of-plane polar ordering. The bulk contribution came mainly from the space charge region (SCR), which was formed by Se vacancies aggregated at the air/Bi 2 Se 3 interface; its magnitude can provide an estimate on the field strength in the SCR. Clarification of surface and bulk contributions to SHG can help nonlinear optical techniques be used as a versatile in situ probe for topological insulators.3

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Bulk growth of GaAs An overview

Cited by 78 publications

References 43 publications

Differential thermal analysis of supercooling in CdTe

Differential thermal analysis of supercooling in CdTe

Dislocation cell structures in melt‐grown semiconductor compound crystals

Surface and bulk contributions to the second-harmonic generation in Bi2Se3

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