Bulk Growth of Cadmium Mercury Telluride (CMT)

Capper, P.

doi:10.1002/9780470012086.ch7

Cited by 11 publications

(15 citation statements)

References 38 publications

(50 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…One of the best ways to determine synthesizability and stability of a given material system is to synthesize it, but this is not necessarily straightforward. There is a huge variety of bulk and thin film growth techniques and numerous interconnected parameters to optimize in synthesis and postprocessing, as covered in many texts. − Wide band gap semiconductors can be made in forms of bulk, thin film, 2D, or even quantum dots. Thin films are usually the most useful form for electronic device applications, and will be the focus in this Review.…”

Section: Materials Properties and Research Methodsmentioning

confidence: 99%

Wide Band Gap Chalcogenide Semiconductors

et al. 2020

View full text Add to dashboard Cite

Wide band gap semiconductors are essential for today's electronic devices and energy applications due to their high optical transparency, as well as controllable carrier concentration and electrical conductivity. There are many categories of materials that can be defined as wide band gap semiconductors. The most intensively investigated are transparent conductive oxides (TCOs) such as tin-doped indium oxide (ITO) and amorphous In-Ga-Zn-O (IGZO) used in displays, carbides (e.g. SiC) and nitrides (e.g. GaN) used in power electronics, as well as emerging halides (e.g. g-CuI) and 2D electronic materials (e.g. graphene) used in various optoelectronic devices. Compared to these prominent materials families, chalcogen-based (Ch = S, Se, Te) wide band gap semiconductors are less heavily investigated but stand out due to their propensity for ptype doping, high mobilities, high valence band positions (i.e. low ionization potentials), and broad applications in electronic devices such as CdTe solar cells. This manuscript provides a review of wide band gap chalcogenide semiconductors. First, we outline general materials design parameters of high performing transparent conductors, as well as the theoretical and experimental underpinnings of the corresponding research methods. We proceed to summarize progress in wide band gap (E G > 2 eV) chalcogenide materials, such as II-VI MCh binaries, CuMCh 2 chalcopyrites, Cu 3 MCh 4 sulvanites, mixed anion layered CuMCh(O,F), and 2D materials, among others, and discuss computational predictions of potential new candidates in this family, highlighting their optical and electrical properties. We finally review applications of chalcogenide wide band gap semiconductors, e.g. photovoltaic and photoelectrochemical solar cells, transparent transistors, and light emitting diodes, that employ wide band gap chalcogenides as either an active or passive layer. By examining, categorizing, and discussing prospective directions in wide band gap chalcogenides, this review aims to inspire continued research on this emerging class of transparent conductors and to enable future innovations for optoelectronic devices.

show abstract

Section: Materials Properties and Research Methodsmentioning

confidence: 99%

Wide Band Gap Chalcogenide Semiconductors

et al. 2020

View full text Add to dashboard Cite

show abstract

“…Out of the 91 papers manually surveyed presenting XRD data, 79% reported the XRD source used and predominantly employ a Cu Kα X-ray source (76%), as reported previously. 152 However, 21% of studies did not report their X-ray source, and therefore we strongly encourage for more detailed reporting of experimental conditions. The top-down precursor MoS 2 diffraction pattern in Figure 6 A exhibits many sharp peaks identifying the crystalline nature of the sample.…”

Section: Characterizationmentioning

confidence: 98%

Ex Situ Characterization of 1T/2H MoS₂ and Their Carbon Composites for Energy Applications, a Review

et al. 2023

View full text Add to dashboard Cite

The growing interest in the development of next-generation net zero energy systems has led to the expansion of molybdenum disulfide (MoS 2 ) research in this area. This activity has resulted in a wide range of manufacturing/synthesis methods, controllable morphologies, diverse carbonaceous composite structures, a multitude of applicable characterization techniques, and multiple energy applications for MoS 2 . To assess the literature trends, 37,347 MoS 2 research articles from Web of Science were text scanned to classify articles according to energy application research and characterization techniques employed. Within the review, characterization techniques are grouped under the following categories: morphology, crystal structure, composition, and chemistry. The most common characterization techniques identified through text scanning are recommended as the base fingerprint for MoS 2 samples. These include: scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and Raman spectroscopy. Similarly, XPS and Raman spectroscopy are suggested for 2H or 1T MoS 2 phase confirmation. We provide guidance on the collection and presentation of MoS 2 characterization data. This includes how to effectively combine multiple characterization techniques, considering the sample area probed by each technique and their statistical significance, and the benefit of using reference samples. For ease of access for future experimental comparison, key numeric MoS 2 characterization values are tabulated and major literature discrepancies or currently debated characterization disputes are highlighted.

show abstract

“…While in some applications, e.g. , in optoelectronics, 57 it is of great advantage to have defect-free MOF crystals, positive effects for chemical and physical properties can be introduced at various levels with a certain degree of compositional and structural defects. 58,59…”

Section: Synthetic Approaches For Ma@mofsmentioning

confidence: 99%