Bulk-film structural differences of chalcogenide glasses probed in situ by near-infrared waveguide Raman spectroscopy

Schulte, Alfons; Rivero, Clara; Richardson, Kathleen; Turcotte, Karine; Hamel, V.; Villeneuve, A.; Galstian, Tigran; Vallée, Réal

doi:10.1016/s0030-4018(01)01493-6

Cited by 44 publications

(36 citation statements)

References 12 publications

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“…In addition to surface roughness we believe that the thin-film composition is more inhomogeneous than the bulk glass due to dissociation during evaporation and rapid cooling under vacuum. [14,15] This leads to an increase in disorder and of the density of localized states in the band tail reducing further the free-carrier average drift mobility. [16,17] From Figure 3 we see that increasing the film thickness increases I ph -…”

Section: Metal Metalmentioning

confidence: 99%

Multimaterial Photodetecting Fibers: a Geometric and Structural Study

et al. 2007

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The recent development of codrawn metal-insulator-semiconductor photodetecting fiber devices with mesoscopic-scale cross-sectional features has heralded a novel path to optical radiation detection. [1][2][3][4][5][6][7][8] For the first time, optical detection function may be delivered at length scales and in a mechanically flexible form hitherto associated with optical fibers. At the heart of the fabrication process is the simultaneous reduction of the cross-section and extension of the axial dimensions of a macroscopic prefrom. Thermal drawing results in extended length scales of functional fiber while maintaining the material composition and transverse geometry throughout. Although beneficial for many applications, [1,2,5,6] the extended length scales of fiber-devices tend to degrade their performance by raising the noise floor. Our study aims to minimize the noise per unit length by identifying optimal fiber structures and geometries. A comparative study of the responsivity, noise and sensitivity [9,10] of photodetecting fibers as a function of structural and geometric scaling parameters is performed. A novel thin-film photodetecting fiber device architecture is introduced. Precise control over the submicron scale dimensions affords more than an order of magnitude increase in the fiber-device sensitivity. Potential applications of fiber devices include remote sensing, functional fabrics, and largearea, two-dimensional (2D) and three-dimensional (3D) arrays (or "fiber webs") capable of optical imaging. [1,5,6]

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Section: Metal Metalmentioning

confidence: 99%

Multimaterial Photodetecting Fibers: a Geometric and Structural Study

et al. 2007

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“…The material of interest is cast into a slab waveguide, thereby significantly increasing both the scattering volume and the electrical field intensity within the film. In spite of its sensitivity, waveguide Raman spectroscopy (WRS) using guided mode excitation [29,30] has not been applied to the structural characterization of chalcogenide glasses until recently [31,32]. Discussed here are selective results of such experiments where chalcogenide film Raman spectra were measured using guided mode excitation.…”

Section: Raman Spectroscopymentioning

confidence: 99%

“…The refractive index of these organic and oxide materials allows the use of high-index glass prisms such as LaSF5 (n ∼ 1.8) for coupling a range of propagation vectors into the waveguide structure. In spite of its sensitivity, WRS has not been applied to the structural characterization of chalcogenide glasses until recently [31,32] most likely owing to their high index (∼2.45) and lack of suitable prism couplers and difficulties associated with working in the near-infrared. Figure 23.8 illustrates the variation in Raman spectra obtained in an As 2 S 3 channel (film) waveguide structure, as probed across the waveguide endface.…”

Section: Nir Waveguide and Micro-raman Spectroscopy Of Chalcogenide Fmentioning

confidence: 99%

Engineering Glassy Chalcogenide Materials for Integrated Optics Applications

Richardson¹,

Cardinal

Richardson

et al. 2003

Photo‐Induced Metastability in Amorphous Semiconductors

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Next generation devices for telecommunication and related applications will rely on the development of materials which possess optimized physical properties that are compatible with packaging requirements for systems in planar or fiber form. This allows suitable "integration" to existing fiber-based applications and hence requires appropriate consideration to material choice, its stability and long-term aging behavior. Included within this chapter are results of recent efforts to engineer materials suitable for such integration. First, needs for integrated optics and the attractiveness of chalcogenide-based glasses (ChGs) are reviewed. Second, the flexibility offered within the As-S-Se glass system is discussed, and comparisons are drawn between glasses in bulk and film forms. Following a description of the chemical systems and the properties evaluated on materials in bulk glass and film form, results of efforts to create components and characterize key structural attributes of such elements are described. The property differences and characterization tools employed to realize these data are presented. Efforts have been made in these studies to process and characterize the resulting structures in the form to be used in their final device geometry. Lastly, the ability to photo-induce changes within these glasses are discussed and key issues of such modification are reviewed. Described are results of efforts to tailor optical properties concurrent with structural stability, and to evaluate changes to these properties which result during photo-modification and subsequent aging. Chalcogenide Glasses for Near-Infrared (NIR) OpticsTwo characteristics of As-S-(Se) compounds -a large glass forming region and a wide optical transmission band, with potentially low loss for the 1.3-1.55 µm telecommunications window -make them excellent candidates for infrared guiding applications. The ability to process these glasses in substantial quantities in their bulk form, and their demonstrated capability of fabricating good optical quality thin films formed by thermal evaporation and other deposition techniques, enables the realization of relatively low cost As-S-(Se) integrated optical components. With appropriate consideration of function and application, such components can be "integrated" onto a single "chip" or substrate.In complementary work to that described elsewhere in this text, we and our collaborators have demonstrated a range of optical functions that can be realized in these glasses, including rare earth (Pr and Er) doping and emission in key telecommunication wavelengths, fabricationPhoto-Induced Metastability in Amorphous Semiconductors. Edited by Alexander V. Kolobov

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“…Chalcogenide glasses have drawn great interest for potential use in next generation photonics applications including all-optical switching and regeneration, due to their high refractive indices, high non-linearities, magneto-optic coefficients and transparency in the infrared [1][2][3]. Ge 33 As 12 Se 55 has proven to have high non-linearity [4] and large magneto-optic coefficient [5].…”

Section: Introductionmentioning

confidence: 99%