2018
DOI: 10.1103/physrevb.97.115155
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Bulk electronic structure of non-centrosymmetric EuTGe3 ( T=Co , Ni, Rh, Ir) studied by hard x-ray photoelectron spectroscopy

Abstract: Non-centrosymmetric EuT Ge3 (T =Co, Ni, Rh, and Ir) possesses magnetic Eu 2+ ions and antiferromagnetic ordering appears at low temperatures. Transition metal substitution leads to changes of the unit cell volume and of the magnetic ordering. However, the magnetic ordering temperature does not scale with the volume change and the Eu valence is expected to remain divalent. Here we study the bulk electronic structure of non-centrosymmetric EuT Ge3 (T =Co, Ni, Rh, and Ir) by hard x-ray photoelectron spectroscopy.… Show more

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Cited by 10 publications
(7 citation statements)
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“…Figure 3 shows the simulated partial DOS that mainly contribute to the valence band and their sum at 0, 20, and 43 GPa. The simulated DOS at ambient pressure is consistent with the previous result [27]. The Eu 4f orbitals are almost half occupied and the 4f DOS is localized at −1 eV.…”
Section: Resultssupporting
confidence: 90%
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“…Figure 3 shows the simulated partial DOS that mainly contribute to the valence band and their sum at 0, 20, and 43 GPa. The simulated DOS at ambient pressure is consistent with the previous result [27]. The Eu 4f orbitals are almost half occupied and the 4f DOS is localized at −1 eV.…”
Section: Resultssupporting
confidence: 90%
“…The obtained v is plotted in figure 2(b) as a function of pressure. The Eu valence obtained at ambient pressure is 2.13 ± 0.02 which is similar to the value obtained in the earlier photoelectron spectroscopy (PES) experiment [27]. With increasing pressure up to 20 GPa, v linearly increases, and at higher pressures shows a tendency towards saturation.…”
Section: Resultssupporting
confidence: 88%
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“…A candidate for such behavior is EuPtSi 3 , belonging to a class of europium-based compounds crystallizing in the noncentrosymmetric tetragonal space group I4mm [19][20][21][22][23][24][25][26][27][28][29][30][31][32]. In a seminal study, Kumar and colleagues investigated single-crystal platelets grown from a tin solution [33].…”
Section: Motivationmentioning
confidence: 99%
“…HAXPES at GALAXIES has been used both for fundamental studies (e.g in semiconductors, oxides [5], topological insulator [6] or heavy fermion compounds [7]) and applied science. The large penetration depth of the electrons at high kinetic energy makes HAXPES an ideal tool for depth profiling.…”
Section: Haxpes For Depth Profilingmentioning
confidence: 99%