2018 International Conference on Computing, Power and Communication Technologies (GUCON) 2018
DOI: 10.1109/gucon.2018.8674887
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Bulk Driven Second Generation Current Conveyor based All-Pass Section for Low Voltage Operation

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Cited by 4 publications
(2 citation statements)
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“…The FDCCII structures that were reported in the literature employed large supply voltages, as high as 5 V [6] . However, in 2014, Kumngern et al introduced a low voltage structure [7] using the bulk driven technique [8] . The operating supply was reduced to 0.5 V. While the semiconductor industry races toward lower-technology nodes still in FDCC structures transistor technology, ranging from 0.35 μm to as large as 1.2 μm [5][6]9] .…”
Section: Introductionmentioning
confidence: 99%
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“…The FDCCII structures that were reported in the literature employed large supply voltages, as high as 5 V [6] . However, in 2014, Kumngern et al introduced a low voltage structure [7] using the bulk driven technique [8] . The operating supply was reduced to 0.5 V. While the semiconductor industry races toward lower-technology nodes still in FDCC structures transistor technology, ranging from 0.35 μm to as large as 1.2 μm [5][6]9] .…”
Section: Introductionmentioning
confidence: 99%
“…This was scaled down to 0.18 μm as reported in Ref. [7], but this challenge remains. Since the FDCCII block comes with the inherent advantage of realizing multifunctional filters using a single block [4,6,10] , this leads to an issue in the non-independent tuning of ω o and Q.…”
Section: Introductionmentioning
confidence: 99%