Bulk and Thin Film Switching and Memory Effects in Semiconducting Chalcogenide Glasses

Stocker, H. J.

doi:10.1063/1.1652900

Cited by 60 publications

(9 citation statements)

References 2 publications

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“…This is driving research on materials systems and architectures for memory devices. [21][22][23][24][25][26] High capacity and low cost write-once-read-many-times ͑WORM͒ memories have advantages over rewritable memories for archival storage applications such as flash memory cards and miniature hard disks. For example, WORM memories require no energy to refresh stored data; an especially important feature for mobile and handheld applications.…”

Section: Introductionmentioning

confidence: 99%

Electrochromic conductive polymer fuses for hybrid organic/inorganic semiconductor memories

Möller

Forrest

Perlov

et al. 2003

Journal of Applied Physics

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We demonstrate a nonvolatile, write-once-read-many-times ͑WORM͒ memory device employing a hybrid organic/inorganic semiconductor architecture consisting of thin film p-i-n silicon diode on a stainless steel substrate integrated in series with a conductive polymer fuse. The nonlinearity of the silicon diodes enables a passive matrix memory architecture, while the conductive polyethylenedioxythiophene:polystyrene sulfonic acid polymer serves as a reliable switch with fuse-like behavior for data storage. The polymer can be switched at ϳ2 s, resulting in a permanent decrease of conductivity of the memory pixel by up to a factor of 10 3 . The switching mechanism is primarily due to a current and thermally dependent redox reaction in the polymer, limited by the double injection of both holes and electrons. The switched device performance does not degrade after many thousand read cycles in ambient at room temperature. Our results suggest that low cost, organic/inorganic WORM memories are feasible for light weight, high density, robust, and fast archival storage applications.

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Section: Introductionmentioning

confidence: 99%

Electrochromic conductive polymer fuses for hybrid organic/inorganic semiconductor memories

Möller

Forrest

Perlov

et al. 2003

Journal of Applied Physics

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“…Several interpretations based on electronic interface states, ionic displacernents, thermal processes, polarization and space charge effects have been suggested. It might be that the current oscillations described here result from thermal devitrification of glass; the transition froin insulating state to conducting state would be related to a1 ocal glass-crystal phase transition due to heating by Joule's effect in thin channels of glass (filamentary conduction [15]). I n conclusion, it was shown that, in convenient experimental conditions, fieldemission microscopy from metallic tips coated with glass can give valuable inforination about the behaviour of glass submitted to very high electric fields.…”

Section: Resultsmentioning

confidence: 94%

Field-Emission Microscopy from Glass-Coated Tips. Observation of Fowler-Nordheim Emission Regime and of Periodic Current Oscillations

Rihon

1979

Phys. Stat. Sol. (a)

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BYInjection of electrons into glass by tunneling from metallic tipsspecially platinum tipsis investigated in a field-emission microscope. KO current is detected a t applied voltages up to 30 kV when the thickness of glass layers is larger than a few microns. On the contrary, in the case of very thin glass coatings ( s 0.1 pm), current-voltage characteristics can be measured; a t lowest currents, the emission obeys the Fowler-Nordheim equation, while periodic current oscillations are observed a t higher currents ( i = A). Field-electron and field-ion micrographs from platinum tips whose glass coating is removed by various treatments (heating in vacuum, dissolution of glass in hydrofluoric acid) are also presented and discussed.On a examink, A l'aide de la microscopie h emission de champ, l'injection d'6lectrons dans le verre par effet tunnel & I'interface mktal-verre. Dans le cas de pointes enrob6es par des couches de verre dont 1'6paisseur est de quelques microns, aucun courant n'est d6tect6, m@me A des voltages aussi &lev&s que 30 kV. Par contre, des caractkristiques courant-tension ont ktk mesurkes dans le cas d'enrobages de verre minces ( s 0,l pm); aux faibles courants, l'kmission obkit h 1'6quation de Fowler-Nordheim, tandis que des oscillations pkriodiques de courant ont ktk observkes dans le domaine des courants plus 61ev6s (i = 10-8 A). On prksente 6galement des micrographies 6lectroniques e t ioniques de champ obtenues avec des pointes de platine dont l'enrobage de verre a k t k enlev6 par divers traitements (chauffage sous vide, dissolution du verre dans l'acide fluorhydrique).

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“…V-VI chalcogenides are an important compound group which have been widely used as phase-change memory (PRAM) [1][2][3][4][5], thermoelectric [6][7], photoelectronic [8][9][10][11] and chemical sensor [12]. Many phase-change memory and photoelectronic devices are based on chalcogenide thin films.…”

Section: Introductionmentioning

confidence: 99%

Spin coating-Co-reduction approach: A general strategy for preparation of oriented chalcogenide thin film on arbitrary substrates

Zhao

Liu

et al. 2011

Rare Metals

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A new and general spin coating-co-reduction strategy for synthesis of c-axis oriented (Bi,Sb) 2 (Te,Se) 3 chalcogenide thin films and multilayered structures on different substrates was reported. This method combines spin coating technique and co-reduction chemical reaction processes using commercial nitrates and oxides as raw materials. This simple and reliable method provides a new approach for fabricating chalcogenide semiconductor or semi-metal thin films, and will have wide application potential in opto-electric, thermoelectric, phase-change memory, chemical sensor, and spintronic devices.

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Bulk and Thin Film Switching and Memory Effects in Semiconducting Chalcogenide Glasses

Cited by 60 publications

References 2 publications

Electrochromic conductive polymer fuses for hybrid organic/inorganic semiconductor memories

Electrochromic conductive polymer fuses for hybrid organic/inorganic semiconductor memories

Field-Emission Microscopy from Glass-Coated Tips. Observation of Fowler-Nordheim Emission Regime and of Periodic Current Oscillations

Spin coating-Co-reduction approach: A general strategy for preparation of oriented chalcogenide thin film on arbitrary substrates

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