Building high performance transistors on carbon nanotube channel

Pitner, Gregory; Safron, Nathaniel S.; Chao, Tsu-Ang; Li, Shengman; Su, Sheng-Kai; Zeevi, Gilad; Lin, Qing; Chiu, Hsin-Yuan; Passlack, M.; Zhang, Zichen; Sathaiya, D. Mahaveer; Wei, Aslan; Gilardi, Carlo; Chen, Edward; Liew, San-Lin; Hou, Vincent; Wu, Chang-Mou; Wu, Jun; Lin, Zhiwei; Fagan, Jeffrey; Zheng, Ming; Wang, Han; Mitra, Subhasish; Wong, H.-S. Philip; Radu, Iuliana

doi:10.23919/vlsitechnologyandcir57934.2023.10185374

Cited by 4 publications

(10 citation statements)

References 4 publications

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“…In practical device technology, solid-state doping will be used instead of the extension gate. 13,38 The scanning electron microscopy (SEM) and transmission electron microscopy (TEM) images in Figure 2a verify the single-CNT channel and label all key dimensions, including the gate length (L G ) of 70 nm and extension length (L EXT ) of 50 nm used in this paper.…”

Section: Resultsmentioning

confidence: 83%

“…It is unique to CNFETs that the channel material band gap is tunable with a wide range from 0.6 to 1.1 eV as the CNT band gap depends on the diameter. 13 Table S1 summarizes previous literature that measures CNFETs' offcurrent considering only one of these parameters, 22−24,30−36 while this work simultaneously captures all three effects. Understanding the BTBT mechanism and calibrating device S2 on CVD-grown aligned CNTs with a broad diameter distribution.…”

Section: Resultsmentioning

confidence: 99%

“…While the experimental portion of this study uses electrostatic doping to induce tunable doping levels in the extension region, integrated CNT MOSFETs need to rely on solid-state doping to avoid additional parasitic capacitance. 13,38 We therefore first model the impact of a uniform step-like n EXT , analogous to what could be obtained by solid-state doping. The chemical extension doping effects depend on V DS and the CNT band gap and are similar to The dominant tunneling mechanism in (a) with high extension doping concentration is band-to-band tunneling (BTBT), while (c) shows ambipolar tunneling at a low extension doping level.…”

Section: Cnt Mosfet Negf Leakage Current Projectionmentioning

confidence: 99%

“…7 Moreover, the low-temperature fabrication of CNT MOSFETs (i.e., <400 °C) enables monolithic three-dimensional (3D) ultradense integration of logic and memory, leading to even larger energy and throughput benefits at the application level. 8−11 Much progress has been made on CNT transistors (CNFETs), including a low contact resistance of 6.5 kΩ/ CNT at 10 nm contact length for p-type and 5.1 kΩ/CNT at 20 nm contact length for n-type; 12,13 a high-density aligned CNT assembly from 250 to 500 CNTs/μm; 6,14−16 and an excellent short-channel effect immunity when reducing gate lengths down to 15 nm due to a 0.35 nm interfacial dielectric (k = 7.8) and a 2.5 nm high-k ALD dielectric (k = 24) top-gate stack. 17 Furthermore, VLSI CNT CMOS systems have already been demonstrated 18 and integrated into multiple Si facilities at mature nodes.…”

mentioning

confidence: 99%

“…17 Furthermore, VLSI CNT CMOS systems have already been demonstrated 18 and integrated into multiple Si facilities at mature nodes. 19−21 However, the small band gap (tunable from 0.6 to 1.1 eV for CNTs 13 vs 1.12 eV for Si) and the low effective mass of CNTs have potentially large drain leakage, which may increase the standby power and degrade the energy efficiency of CNT transistors. 22−24 Therefore, it is essential to understand how design choices, including the CNFET device structure, CNT diameter, supply voltage, and extension doping level, can be engineered to control the leakage current.…”

mentioning

confidence: 99%

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Band-to-Band Tunneling Leakage Current Characterization and Projection in Carbon Nanotube Transistors

Lin,

Gilardi,

et al. 2023

ACS Nano

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Carbon nanotube (CNT) transistors demonstrate high mobility but also experience off-state leakage due to the small effective mass and band gap. The lower limit of off-current (I MIN) was measured in electrostatically doped CNT metal-oxide-semiconductor field-effect transistors (MOSFETs) across a range of band gaps (0.37 to 1.19 eV), supply voltages (0.5 to 0.7 V), and extension doping levels (0.2 to 0.8 carriers/nm). A nonequilibrium Green’s function (NEGF) model confirms the dependence of I MIN on CNT band gap, supply voltage, and extension doping level. A leakage current design space across CNT band gap, supply voltage, and extension doping is projected based on the validated NEGF model for long-channel CNT MOSFETs to identify the appropriate device design choices. The optimal extension doping and CNT band gap design choice for a target off-current density are identified by including on-current projection in the leakage current design space. An extension doping level >0.5 carrier/nm is required for optimized on-current.

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Section: Resultsmentioning

confidence: 83%

Section: Resultsmentioning

confidence: 99%

Section: Cnt Mosfet Negf Leakage Current Projectionmentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

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Band-to-Band Tunneling Leakage Current Characterization and Projection in Carbon Nanotube Transistors

Lin,

Gilardi,

et al. 2023

ACS Nano

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Orthogonal Determination of Competing Surfactant Adsorption onto Single-Wall Carbon Nanotubes During Aqueous Two-Polymer Phase Extraction via Fluorescence Spectroscopy and Analytical Ultracentrifugation

Sims,

Fagan

2024

J. Phys. Chem. C

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A combination of analytical ultracentrifugation (AUC) and fluorescence spectroscopy are utilized to orthogonally probe compositions of adsorbed surfactant layers on the surface of (7,5) species single-wall carbon nanotubes (SWCNTs) under conditions known to achieve differential partitioning in aqueous two-phase extraction (ATPE) separations. Fluorescence emission intensity and AUC anhydrous particle density measurements independently probe and can discriminate between adsorbed surfactant layers on a (7,5) nanotube comprised of either of two common nanotube dispersants, the anionic surfactants sodium deoxycholate and sodium dodecyl sulfate. Measurements on dispersions containing mixtures of both surfactants indicate near total direct exchange of the dominant surfactant species adsorbed to the carbon nanotube at a critical concentration ratio consistent with the ratio leading to partitioning change in the ATPE separation. By conducting these orthogonal measurements in a complex environment reflective of an ATPE separation, including multiple surfactant and polymer solution components, the results provide direct evidence for the hypothesis that it is the nature of the adsorbed surfactant layer that primarily controls partitioning behavior in selective ATPE separations of SWCNTs.

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Complementary carbon nanotube metal–oxide–semiconductor field-effect transistors with localized solid-state extension doping

Zhang,

Passlack,

Pitner

et al. 2023

Nat Electron

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Building high performance transistors on carbon nanotube channel

Cited by 4 publications

References 4 publications

Band-to-Band Tunneling Leakage Current Characterization and Projection in Carbon Nanotube Transistors

Band-to-Band Tunneling Leakage Current Characterization and Projection in Carbon Nanotube Transistors

Orthogonal Determination of Competing Surfactant Adsorption onto Single-Wall Carbon Nanotubes During Aqueous Two-Polymer Phase Extraction via Fluorescence Spectroscopy and Analytical Ultracentrifugation

Complementary carbon nanotube metal–oxide–semiconductor field-effect transistors with localized solid-state extension doping

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