Building crystalline Sb2S3 nanowire dandelions with multiple crystal splitting motif

Preparation and characterization of the rod-shaped stibnite

“…The spectrum exhibits five Raman peaks located at: 140 cm À1 , 183 cm À1 , 278 cm À1 , 298 cm À1 and 491 cm À1 . All these results are consistent with the Raman investigations reported by Chen et al and Wang et al [14][15], which correspond to the characteristic Raman shifts for crystalline phase of Sb 2 S 3 . The roughness parameter of the Stibnite thin film was evaluated by Atomic Force Microscopy (AFM).…”

“…We note the appearance of (1 0 2), (2 0 2) and (1 0 3) peaks corresponding to the most intense orientations which are characteristic of the orthorhombic phase. These are in agreement with those found in the literature [7,11]. It is also worth noting that no other phases are detected by means of XRD analysis indicating a high purity of obtained film.…”

“…On the other hand, Sb 2 S 3 has an orthorhombic lattice-shaped structure consisting from infinite atom chains or chain of (Sb x S y ). In fact, the binding among these chains is significantly lower than in the atom chains, then Sb 2 S 3 tends to form one-dimensional structures such as nanowires, nanoribbons and nanotubes in appropriate growth conditions [10][11][12][13]. This paper describes a simple and reproducible route to synthesize micro-wires of Sb 2 S 3 prepared by the thermal evaporation of antimony on glass substrates, followed by heat treatment in sulfur atmosphere.…”

The electronic structure of the antimony chalcogenide series: Prospects for optoelectronic applications

“…Band structure calculations for Sb 2 S 3 using PBE-DFT show that it posses an indirect fundamental band gap of 1.35 eV with the valence band maximum and conduction band minimum located at G and Y, respectively [32]. Sb 2 S 3 has a direct optical band gap with experimental studies reporting a range from 1.66-2.24 eV [14,32,33,34,35,36,37,38,39,40,41], which is found to increase with the film thickness and temperature [42,43]. The nature of the band gap for Sb 2 Se 3 is also unclear but an experimental range of 1.00-1.82 eV has been reported, where the lower energy transitions are considered to be indirect [44,45,46,47].…”

“…The antimony chalcogenides (Sb 2 Ch 3 , Ch = O, S, Se, Te) are of considerable interest for optoelectronic applications due to their high refractive indexes, photo-sensitivity, high electrical conductivity, strong adsorption and transport properties [1,2,3,4,5,6,7,8,9,10,11,12,13,14]. Antimony oxide (Sb 2 O 3 ) is a potential candidate for photocatalysis due to its large and direct band gap located in the near-ultraviolet region [1,2].…”