Buffer layer effect on the structural and electrical properties of rubrene-based organic thin-film transistors

Seo, Jung Hwa; Park, D. S.; Cho, S. W.; Kim, C. Y.; Jang, Woosun; Whang, C. N.; Yoo, Keunje; Chang, Gap Soo; Pedersen, Tor; Moewes, A.; Chae, Keun Hwa; Cho, S. J.

doi:10.1063/1.2363940

Cited by 45 publications

(38 citation statements)

References 15 publications

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“…It is generally found by different researchers that the obtained rubrene films usually exhibit amorphous morphology [16][17][18]. Park et al observed the growth of island-like crystalline domains only after annealing the films at higher-than-room temperatures [18].…”

Section: Methodsmentioning

confidence: 98%

Temperature-dependent singlet exciton fission observed in amorphous rubrene films

Chen

Zhang

et al. 2015

Organic Electronics

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Section: Methodsmentioning

confidence: 98%

Temperature-dependent singlet exciton fission observed in amorphous rubrene films

Chen

Zhang

et al. 2015

Organic Electronics

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“…In an alternative approach, which has been at first suggested by Haemori and co-workes, we succeeded to generate crystallization by use of a suited seed-layer, in this case a monolayer of pentacene [15,16]. With respect to the transistor measurements discussed below it is important to note that the pentacene seed-layer does not form a closed monolayer on the SiO 2 substrate.…”

Section: Recrystallization Of Rubrene Layersmentioning

confidence: 95%

Thermally and seed‐layer induced crystallization in rubrene thin films

Nothaft

Pflaum

2008

Physica Status Solidi (b)

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We have analyzed the tendency of crystallization and the thermal activation of ordering processes in rubrene thin films. As we will demonstrate, a crystalline phase with a unit cell in agreement to the bulk structure can be stabilized upon heating of amorphous rubrene layers previously capped by a sputtered SiOx layer. This encapsulation significantly enhances the thermal stability of the organic film by about 150 °C. We compared this approach with crystallization initiated by the presence of a pentacene seed layer during rubrene deposition. Thin film transistors prepared by this route showed hole mobilities of 0.01 cm2/Vs which are four orders of magnitude higher than for their amorphous counterparts. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…These results indicate that substitutions in the peri-positions of acenes are in fact favorable to strong π-π intermolecular interactions and a large π-π overlap. However, it is pity that thin films of 22 could show only low mobilities of 0.07 cm 2 V −1 s −1 when using pentacene as buffer layer [76], and 0.7 cm 2 V −1 s −1 when mixed with ultra-high-molecularweight polymer [77]. The low mobility could be attributed to poor planarity structure of 22.…”

Section: Acenes and Derivativesmentioning

confidence: 95%

Organic Semiconductors for Field-Effect Transistors

Zhang

2015

Lecture Notes in Chemistry

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An important application of organic semiconductors is to fabricate organic field-effect transistors (OFETs) which are essential building blocks for the next generation of organic circuits. In terms of molecular size or molecular weight, organic semiconductors can be divided into small-molecule and polymer semiconductors, and thus their corresponding OFETs can also be categorized into organic small molecule OFETs and polymer field-effect transistors (PFETs). On the basis of the main charge carriers transporting in OFET channels, organic semiconductors can be further divided into p-type, n-type, and ambipolar semiconducting materials. According to the characteristic of the organic semiconductors, the OFETs can be classified into two types: organic thin film transistors (OTFTs) and organic single crystal transistors. In any kind of OFET devices, organic semiconductor materials are the core; their properties determine the performance of the electronic devices. Therefore, the design and synthesis of high performance organic semiconductor materials are the basis and premise of the wide application of OFET devices. In the past few decades, great progress has been made in developing organic semiconductors. Besides organic semiconducting materials, there are many other factors influencing the performance of OFETs including device configuration, processing technique, and other devices physical factors, etc. In the following, a brief review of the development of p-type, n-type, ambipolar organic semiconductors and their field-effect properties is given. The history, mechanism, configuration, and fabrication methods of OFET devices and main performance influencing factors of OFETs are also introduced.

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Buffer layer effect on the structural and electrical properties of rubrene-based organic thin-film transistors

Cited by 45 publications

References 15 publications

Temperature-dependent singlet exciton fission observed in amorphous rubrene films

Temperature-dependent singlet exciton fission observed in amorphous rubrene films

Thermally and seed‐layer induced crystallization in rubrene thin films

Organic Semiconductors for Field-Effect Transistors

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